High Field Mobility and Diffusivity of Electron Gas in Silicon Devices

S. F. Liotta; A. Majorana

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arXiv · cond-mat/0003457

High Field Mobility and Diffusivity of Electron Gas in Silicon Devices

S. F. Liotta·A. Majorana

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Abstract

In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions allow to calculate the mobility and diffusion coefficients as function of the electric field. The integral-differential equations derived by the above method are numerically solved by means of a combination of spherical harmonics functions and finite-difference operators. The Kane model for the electron band structure is assumed; the parabolic band approximation is obtained as a particular case. The numerical values for mobility and diffusivity in a silicon device are compared with the experimental data. The Einstein relation is also shown.

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S. F. Liotta, A. Majorana. 2000-03-28. High Field Mobility and Diffusivity of Electron Gas in Silicon Devices. https://arxiv.org/abs/cond-mat/0003457

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