Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions

Abstract

Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$Ω$) have been studied experimentally and theoretically. Our experimental data demonstrate that -- in agreement with previous results on single- and double-junction systems -- Coulomb blockade effects survive even in the strong tunneling regime and are still clearly visible for junction resistances as low as 1 k$Ω$. We have developed a quasiclassical theory of electron transport in junction arrays in the strong tunneling regime. Good agreement between the predictions of this theory and the experimental data has been observed. We also show that, due to both heating effects and a relatively large correction to the linear relation between the half-width of the conductance dip around zero bias voltage, $V_{1/2}$, and the measured electronic temperature, such arrays are inferior to those conventionally used in the Coulomb Blockade Thermometry (CBT). Still, the desired correction to the half-width, $ΔV_{1/2}$, can be determined rather easily and it is proportional to the magnitude of the conductance dip around zero bias voltage, $ΔG$. The constant of proportionality is a function of the ratio of the junction and quantum resistances, $R/R_{\rm q}$, and it is a pure strong tunneling effect.