arXiv · cond-mat/0007140
Evidence of two-electron tunneling interference in Nb/InAs junctions
Abstract
The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasi-classical Green-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.
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Antonio Badolato, Francesco Giazotto, Marco Lazzarino, Pasqualantonio Pingue, Fabio Beltram, Carlo Lucheroni, Rosario Fazio. 2000-07-08. Evidence of two-electron tunneling interference in Nb/InAs junctions. https://doi.org/10.1103/physrevb.62.9831
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