arXiv subjects

Marco Lazzarino

Publications and source records attributed to Marco Lazzarino.

7 recordsLinked to original sources

arXiv2020

Soft X-ray spectroscopies in liquids and at solid-liquid interface at BACH beamline at Elettra

The Beamline for Advanced diCHroism (BACH) of the Istituto Officina dei Materiali-Consiglio Nazionale delle Ricerche (IOM-CNR), operating at Elettra synchrotron in Trieste (Italy), works in the extreme ultra violet (EUV)-soft X-ray photon energy range with selectable light polarization, high energy resolution, brilliance and time resolution. The beamline offers a multi-technique approach for the investigation of the electronic, chemical, structural, magnetic, and dynamical properties of materials. Recently one of the three end-stations has been dedicated to experiments based on electron transfer processes at the solid/liquid interfaces and during photocatalytic or electrochemical reactions. Suitable cells to perform soft X-ray spectroscopy in the presence of liquids and reagent gases at ambient pressure were developed. Here we present two types of static cells working in transmission or in fluorescence yield, and an electrochemical flow cell which allows to carry out cyclic voltammetry in situ, electrodeposition on a working electrode (WE) and to study chemical reactions in-operando conditions. Examples of X-ray absorption spectroscopy (XAS) measurements performed in ambient conditions and during electrochemical experiments in liquid are presented.

physics.ins-det↗

arXiv2016

Fluorescence Excitation by Enhanced Plasmon Upconversion under Continuous Wave Illumination

We demonstrate effective background-free continuous wave nonlinear optical excitation of molecules that are sandwiched between asymmetrically constructed plasmonic gold nanoparticle clusters. We observe that near infrared photons are converted to visible photons through efficient plasmonic second harmonic generation. Our theoretical model and simulations demonstrate that Fano resonances may be responsible for being able to observe nonlinear conversion using a continuous wave light source. We show that nonlinearity enhancement of plasmonic nanostructures via coupled quantum mechanical oscillators such as molecules can be several orders larger as compared to their classical counterparts.

physics.optics↗

arXiv2002

High-performance planar light-emitting diode

Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs, promising very high-frequency device operation. Devices were fabricated by UV lithography and wet chemical etching starting from p-type modulation-doped AlGaAs/GaAs heterostructures grown by molecular beam epitaxy. Electrical and optical measurements from room temperature down to 1.8 K show high spectral purity and high external efficiency. Time-resolved measurements yielded extremely short recombination times of the order of 50 ps, demonstrating the relevance of the present scheme for high-frequency device applications in the GHz range.

cond-mat.mtrl-sci↗

arXiv2001

de Gennes-Saint-James resonant transport in Nb/GaAs/AlGaAs heterostructures

Resonant transport is demonstrated in a hybrid superconductor-semiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This heterostructure realizes the model system introduced by de Gennes and Saint-James in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. {\bf 4}, 151 (1963)]. At low temperatures a single marked resonance peak is shown superimposed to the characteristic Andreev-dominated subgap conductance. The observed magnetotransport properties are successfully analyzed within the random matrix theory of quantum transport, and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations.

cond-mat.supr-con↗

arXiv2001

Reflectionless tunneling in planar Nb/GaAs hybrid junctions

Reflectionless-tunneling was observed in Nb/GaAs superconductor/semiconductor junctions fabricated through a two-step procedure. First, periodic $δ$-doped layers were grown by molecular beam epitaxy near the GaAs surface, followed by an As cap layer to protect the surface during {\it ex-situ} transfer. Second, Nb was deposited by dc-magnetron sputtering onto the GaAs(001) 2 $\times$ 4 surface {\it in-situ} after thermal desorption of the cap layer. The magnetotransport behavior of the resulting hybrid junctions was successfully analyzed within the random matrix theory of phase-coherent Andreev transport. The impact of junction morphology on reflectionless tunneling and the applicability of the fabrication technique to the realization of complex superconductor/semiconductor mesoscopic systems are discussed.

cond-mat.supr-con↗

arXiv2000

Evidence of two-electron tunneling interference in Nb/InAs junctions

The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasi-classical Green-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.

cond-mat.supr-con↗

arXiv1998

Andreev reflection in Si-engineered Al/InGaAs hybrid junctions

Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybrid microstructures.

cond-mat.supr-con↗