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The Electrochemical Carbon Nanotube Field-Effect Transistor

M. Krueger·M. R. Buitelaar·T. Nussbaumer·C. Schoenenberger·L. Forro
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Abstract

We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy shifts of order +/- 1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage the NTs are hole doped in air with E_F ? 0.3-0.5 eV, corresponding to a doping level of ? 10^{13} cm^{-2}. Hole-doping increases in the electrolyte. This hole doping (oxidation) is most likely caused by the adsorption of oxygen in air and cations in the electrolyte.

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M. Krueger, M. R. Buitelaar, T. Nussbaumer, C. Schoenenberger, L. Forro. 2000-09-12. The Electrochemical Carbon Nanotube Field-Effect Transistor. https://doi.org/10.1063/1.1350427

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