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Phase transitions, stability, and dielectric response of the domain structure in ferroelectric-ferroelastic thin films

A. M. Bratkovsky·A. P. Levanyuk
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Abstract

We present the first analytical study of phase transitions in ferroelastic-ferroelectric epitaxial thin films on exactly solvable model. The emerging domain structure with domains of equal width (which may be exponentially large on a "soft" substrate) always remains stable irrespective of the film thickness. The dielectric response of an epitaxial film is {\em smaller} than that of a free film, in striking contrast with assertions in the literature.

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A. M. Bratkovsky, A. P. Levanyuk. 2000-10-08. Phase transitions, stability, and dielectric response of the domain structure in ferroelectric-ferroelastic thin films. https://doi.org/10.1103/physrevlett.86.3642

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