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1.26 $μ$m intersubband transitions in In$_{0.3}$Ga$_{0.7}$As/AlAs quantum wells

Cesar Pascual Garcia·Andrea De Nardis·Vittorio Pellegrini·Jean Marc Jancu·Fabio Beltram·Bernhard H. Mueller·Lucia Sorba·Alfonso Franciosi
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Abstract

We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain the shortest wavelength intersubband transition ever achieved in a semiconductor system. The corresponding transitions occur between the first confined electronic levels of the well following mid-infrared optical pumping of electrons from the barrier X-valley into the well ground state.

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Cesar Pascual Garcia, Andrea De Nardis, Vittorio Pellegrini, Jean Marc Jancu, Fabio Beltram, Bernhard H. Mueller, Lucia Sorba, Alfonso Franciosi. 2000-11-08. 1.26 $μ$m intersubband transitions in In$_{0.3}$Ga$_{0.7}$As/AlAs quantum wells. https://doi.org/10.1063/1.1331347

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