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Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

S. D. Ganichev·H. Ketterl·W. Prettl·I. A. Merkulov·V. I. Perel·I. N. Yassievich·A. V. Malyshev
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Abstract

A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g-factor in the order of several tens depending on impurity.

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S. D. Ganichev, H. Ketterl, W. Prettl, I. A. Merkulov, V. I. Perel, I. N. Yassievich, A. V. Malyshev. 2000-11-23. Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. https://doi.org/10.1103/physrevb.63.201204

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