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I. A. Merkulov

Publications and source records attributed to I. A. Merkulov.

8 recordsLinked to original sources

Long-term Dynamics of the Electron-nuclear Spin System of a Semiconductor Quantum Dot

A quasi-classical theoretical description of polarization and relaxation of nuclear spins in a quantum dot with one resident electron is developed for arbitrary mechanisms of electron spin polarization. The dependence of the electron-nuclear spin dynamics on the correlation time $τ_c$ of electron spin precession, with frequency $Ω$, in the nuclear hyperfine field is analyzed. It is demonstrated that the highest nuclear polarization is achieved for a correlation time close to the period of electron spin precession in the nuclear field. For these and larger correlation times, the indirect hyperfine field, which acts on nuclear spins, also reaches a maximum. This maximum is of the order of the dipole-dipole magnetic field that nuclei create on each other. This value is non-zero even if the average electron polarization vanishes. It is shown that the transition from short correlation time to $Ωτ_c>1$ does not affect the general structure of the equation for nuclear spin temperature and nuclear polarization in the Knight field, but changes the values of parameters, which now become functions of $Ωτ_c$. For correlation times larger than the precession time of nuclei in the electron hyperfine field, it is found that three thermodynamic potentials ($χ$, $\bmξ$, $ς$) characterize the polarized electron-nuclear spin system. The values of these potentials are calculated assuming a sharp transition from short to long correlation times, and the relaxation mechanisms of these potentials are discussed. The relaxation of the nuclear spin potential is simulated numerically showing that high nuclear polarization decreases relaxation rate.

cond-mat.str-el↗

Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots

Electron spin coherence has been generated optically in n-type modulation doped (In,Ga)As/GaAs quantum dots (QDs) which contain on average a single electron per dot. The coherence arises from resonant excitation of the QDs by circularly-polarized laser pulses, creating a coherent superposition of an electron and a trion state. Time dependent Faraday rotation is used to probe the spin precession of the optically oriented electrons about a transverse magnetic field. Spin coherence generation can be controlled by pulse intensity, being most efficient for (2n+1)pi-pulses.

physics.optics↗

Multiple transfer of angular momentum quanta from a spin-polarized hole to magnetic ions in ZnMnSe/ZnBeSe quantum wells

The magnetization kinetics in (Zn,Mn)Se/(Zn,Be)Se quantum wells has been studied on a ps-time scale after pulsed laser excitation. The magnetization induced by an external magnetic field is reduced by up to 30% during ~100 ps due to spin and energy transfer from photocarriers to Mn spin system. The giant Zeeman splitting leads to a complete spin polarization of the carriers, resulting in a strong suppression of flip-flop processes between carriers and magnetic ions. Therefore a multiple angular momentum transfer from each spin-polarized hole to the Mn ions becomes the dominant mechanism in the magnetization dynamics. A model based on spin-momentum coupling in the valence band is suggested for explaining this transfer.

cond-mat.mtrl-sci↗

Optical pumping of electronic and nuclear spin in single charge-tunable quantum dots

We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the charge from positive to neutral to negative using a Schottky diode. We observe that photoluminescence polarization memory has the same sign as the net charge of the dot. Optical pumping of ground state electron spins enhances this effect, as demonstrated through the first measurements of the Hanle effect on an individual quantum dot. With the Overhauser effect in a high longitudinal magnetic field, we demonstrate efficient optical pumping of the quantum dot's nuclear spins for all three charge states.

cond-mat.mtrl-sci↗

Optical Read-Out and Initialization of an Electron Spin in a Single Quantum Dot

We describe theoretically the resonant optical excitation of a trion with circularly polarized light and discuss how this trion permits the read-out of a single electron spin through a recycling transition. Optical pumping through combination of circularly polarized optical $π$--pulses with permanent or $π$-- pulsed transverse magnetic fields suggests feasible protocols for spin initialization.

cond-mat.mtrl-sci↗

Manipulation of the Spin Memory of Electrons in n-GaAs

We report on the optical manipulation of the electron spin relaxation time in a GaAs based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by the electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of n-GaAs layer.

cond-mat↗

Electron spin relaxation by nuclei in semiconductor quantum dots

We have studied theoretically the electron spin relaxation in semiconductor quantum dots via interaction with nuclear spins. The relaxation is shown to be determined by three processes: (i) -- the precession of the electron spin in the hyperfine field of the frozen fluctuation of the nuclear spins; (ii) -- the precession of the nuclear spins in the hyperfine field of the electron; and (iii) -- the precession of the nuclear spin in the dipole field of its nuclear neighbors. In external magnetic fields the relaxation of electron spins directed along the magnetic field is suppressed. Electron spins directed transverse to the magnetic field relax completely in a time on the order of the precession period of its spin in the field of the frozen fluctuation of the nuclear spins. Comparison with experiment shows that the hyperfine interaction with nuclei may be the dominant mechanism of electron spin relaxation in quantum dots.

cond-mat↗

Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g-factor in the order of several tens depending on impurity.

cond-mat↗