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Spin-related transport in ultra small Si quantum dots

Leonid P. Rokhinson·L. J. Guo·D. C. Tsui·S. Y. Chou
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Abstract

We investigated electron transport through ultra small Si quantum dots. We found that the $B$-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. In some dots the number of electrons N in the dot can be tuned starting from zero, and the total spin of the dot can be mapped as a function of N and B. For one of the dots we deduced that the dot becomes spontaneously polarized at N=6 with a large spin change ΔS=3/2, demonstrating the essential features of spin blockade. Surprisingly, for N>20, the transitions with ΔS>1/2 do not lead to the suppression of the corresponding peaks at low temperatures.

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Leonid P. Rokhinson, L. J. Guo, D. C. Tsui, S. Y. Chou. 2001-02-06. Spin-related transport in ultra small Si quantum dots. https://arxiv.org/abs/cond-mat/0102107

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