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Photovoltage Effects in Photoemission from Thin GaAs Layers

G. A. Mulhollan·A. V. Subashiev·J. E. Clendenin·E. L. Garwin·R. E. Kirby·T. Maruyama·R. Prepost
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Abstract

A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\times10^{18} cm^{-3} to 5\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovoltage effect on photoemission is found to diminish to zero at a doping level of 5\times10^{19} cm^{-3}. The experimental results are shown to be in good agreement with calculations using a charge limit model based on surface photovoltage kinetics that assume a constant electron energy relaxation rate in the band bending region.

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G. A. Mulhollan, A. V. Subashiev, J. E. Clendenin, E. L. Garwin, R. E. Kirby, T. Maruyama, R. Prepost. 2001-03-23. Photovoltage Effects in Photoemission from Thin GaAs Layers. https://doi.org/10.1016/s0375-9601(01)00202-x

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