arXiv subjects

E. L. Garwin

Publications and source records attributed to E. L. Garwin.

8 recordsLinked to original sources

arXiv2004

Polarized Electrons for Linear Colliders

Future electron-positron linear colliders require a highly polarized electron beam with a pulse structure that depends primarily on whether the acceleration utilizes warm or superconducting rf structures. The International Linear Collider (ILC) will use cold structures for the main linac. It is shown that a dc-biased polarized photoelectron source such as successfully used for the SLC can meet the charge requirements for the ILC micropulse with a polarization approaching 90%.

physics.acc-ph↗

arXiv2004

A systematic study of polarized electron emission from strained GaAs/GaAsP superlattice photocathodes

Spin-polarized electron photoemission has been studied for GaAs/GaAs$_{1-x}$P$_x$ strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the photoemission characteristics. The heavy-hole and light-hole transitions are reproducibly observed in quantum efficiency spectra, enabling direct measurement of the band energies and the energy splitting. Electron-spin polarization as high as 86% with over 1% quantum efficiency has been observed.

physics.ins-det↗

arXiv2004

Atomic Hydrogen Cleaning of Polarized GaAs Photocathodes

Atomic hydrogen cleaning followed by heat cleaning at 450$^\circ$C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600$^\circ$C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.

physics.ins-det↗

arXiv2004

Recent Progress at SLAC Extracting High Charge from Highly-Polarized Photocathodes for Future-Collider Applications

Future colliders such as NLC and JLC will require a highly-polarized macropulse with charge that is more than an order of magnitude beyond that which could be produced for the SLC. The maximum charge from the SLC uniformly-doped GaAs photocathode was limited by the surface charge limit (SCL). The SCL effect can be overcome by using an extremely high (>1019 cm-3) surface dopant concentration. When combined with a medium dopant concentration in the majority of the active layer (to avoid depolarization), the surface concentration has been found to degrade during normal heat cleaning (1 hour at 600 C). The Be dopant as typically used in an MBE-grown superlattice cathode is especially susceptible to this effect compared to Zn or C dopant. Some relief can be found by lowering the cleaning temperature, but the long-term general solution appears to be atomic hydrogen cleaning.

physics.acc-ph↗

arXiv2003

Surface Analysis of OFE-Copper X-Band Accelerating Structures and Possible Correlation to RF Breakdown Events

X-band accelerator structures meeting the Next Linear Collider (NLC) design requirements have been found to suffer vacuum surface damage caused by radio frequency (RF) breakdown, when processed to high electric-field gradients. Improved understanding of these breakdown events is desirable for the development of structure designs, fabrication procedures, and processing techniques that minimize structure damage. RF reflected wave analysis and acoustic sensor pickup have provided breakdowns localization in RF structures. Particle contaminations found following clean autopsy of four RF-processed travelling wave structures, have been catalogued and analyzed. Their influence on RF breakdown, as well as that of several other material-based properties, will be discussed.

physics.acc-ph↗

arXiv2003

Resistivity Ratio of Niobium Superconducting Cavities

Resistivity measurements have been made on Nb cavities, as well as on Pb and Cu, at 296, 77, and 4.2 K by means of a contactless induced-current method. For superconductors, a constant magnetic field drives the material normal below the transition temperature. These measurements provide a simple means for initial material evaluation as well as a direct means of monitoring the effects of material parameters (purity, heat treatment, gas incorporation, etc.) on the electron mean free path. Approximate determinations of Hc, Hc1, and Hc2 can also be derived from these measurements. Normal-state thermal conductivity and the Ginzburg-Landau parameter kappa are calculated from the resistivity measurements.

cond-mat.supr-con↗

arXiv2003

Thin Dielectric Films in Superconducting Cavities

At high field levels, field emission losses in superconducting cavities have an adverse effect in both reducing the otherwise extremely high Q > 10^9, and the magnetic breakdown field bringing it well below the critical magnetic field of the superconductor. The two effects may well be related as field enhancing whiskers responsible for the field emission losses can be driven normal thus reducing the magnetic breakdown field. Both the beneficial and deleterious effects of anodizing the inner surface of superconducting cavities are discussed and analyzed.

physics.gen-ph↗

arXiv2001

Photovoltage Effects in Photoemission from Thin GaAs Layers

A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\times10^{18} cm^{-3} to 5\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovoltage effect on photoemission is found to diminish to zero at a doping level of 5\times10^{19} cm^{-3}. The experimental results are shown to be in good agreement with calculations using a charge limit model based on surface photovoltage kinetics that assume a constant electron energy relaxation rate in the band bending region.

cond-mat.mtrl-sci↗