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Closely spaced and separately contacted 2d electron and 2d hole gases by in situ focussed ion implantation

M. Pohlt·M. Lynass·J. G. S. Lok·W. Dietsche·K. v. Klitzing·K. Eberl·R. Muhle
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Abstract

Separately contacted double layers of a 2d electron - 2d hole gases have been prepared in GaAs separated by thin AlGaAs barriers with thicknesses down to 15 nm. The molecular-beam-epitaxial growth was interrupted just before the barrier in order to use in situ focussed-ion-beam implantation to pattern contacts which extend underneath the barrier. The two charge gases form upon biasing the p- and n-type contacts underneath and above the barrier in forward direction and show independent transistor-like behavior.

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M. Pohlt, M. Lynass, J. G. S. Lok, W. Dietsche, K. v. Klitzing, K. Eberl, R. Muhle. 2001-03-28. Closely spaced and separately contacted 2d electron and 2d hole gases by in situ focussed ion implantation. https://doi.org/10.1063/1.1463698

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