arXiv subjects

K. Eberl

Publications and source records attributed to K. Eberl.

At least 19 recordsLinked to original sources

arXiv2007

An electrostatically defined serial triple quantum dot charged with few electrons

A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of few electrons charging the TQD. An electrostatic model is developed to determine the ground state charge configurations of the TQD. Numerical calculations are compared with experimental results. In addition, the tunneling conductance through all three quantum dots in series is studied. Quantum cellular automata processes are identified, which are where charge reconfiguration between two dots occurs in response to the addition of an electron in the third dot.

cond-mat.mes-hall↗

arXiv2007

A widely tunable few electron droplet

Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide range of coupling strengths to the leads. The weak coupling regime is described by discrete quantum states. At strong interaction with the leads Kondo phenomena are observed as a function of a magnetic field. By varying gate voltages the electron droplet can, in addition, be distorted into a double quantum dot with a strong interdot tunnel coupling while keeping track of the number of trapped electrons.

cond-mat.mes-hall↗

arXiv2006

Kondo effect in a one-electron double quantum dot: Oscillations of the Kondo current in a weak magnetic field

We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a function of a small perpendicular magnetic field |B| \lesssim 50mT. We discuss possible explanations of this effect and interpret it by means of a fine tuning of the energy mismatch of the single dot levels of the two quantum dots. The observed degree of control implies important consequences for applications in quantum information processing.

cond-mat.mes-hall↗

arXiv2006

Evidence of breakdown of the spin symmetry in diluted 2D electron gases

Recent claims of an experimental demonstration of spontaneous spin polarisation in dilute electron gases \cite{young99} revived long standing theoretical discussions \cite{ceper99,bloch}. In two dimensions, the stabilisation of a ferromagnetic fluid might be hindered by the occurrence of the metal-insulator transition at low densities \cite{abra79}. To circumvent localisation in the two-dimensional electron gas (2DEG) we investigated the low populated second electron subband, where the disorder potential is mainly screened by the high density of the first subband. This letter reports on the breakdown of the spin symmetry in a 2DEG, revealed by the abrupt enhancement of the exchange and correlation terms of the Coulomb interaction, as determined from the energies of the collective charge and spin excitations. Inelastic light scattering experiments and calculations within the time-dependent local spin-density approximation give strong evidence for the existence of a ferromagnetic ground state in the diluted regime.

cond-mat.mtrl-sci↗

arXiv2005

Molecular states in a one-electron double quantum dot

The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the symmetric ground state and the antisymmetric excited state of the double well potential by means of differential conductance measurements. A sizable magnetic field, perpendicular to the two-dimensional electron gas, reduces the extent of the electronic wave-function and thereby decreases the tunnel coupling. A perpendicular magnetic field also modulates the orbital excitation energies in each individual dot. By additionally tuning the asymmetry of the double well potential we can align the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot. This results in a second anticrossing with a much larger tunnel splitting than the anticrossing involving the two electronic ground states.

cond-mat.mes-hall↗

arXiv2005

Direct control of the tunnel splitting in a one-electron double quantum dot

Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the low-energy spectrum of the double quantum dot is characterized by its quantum mechanical interdot tunnel splitting. We directly measure its magnitude by utilizing particular anticrossing features in the stability diagram at finite source-drain bias. By modification of gate voltages defining the confinement potential as well as by variation of a perpendicular magnetic field we demonstrate the tunability of the coherent tunnel coupling.

cond-mat.mes-hall↗

arXiv2004

Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with low electron mobility 2000 cm^2/Vs in spite of the fact that the spin-splitting is much smaller than the level broadening. Experimental results can be explained in the frame of the scaling theory of the quantum Hall effect, applied independently to each of the two spin subbands.

cond-mat.mes-hall↗

arXiv2004

Evidence of spontaneous spin polarization in the two-dimensional electron gas

Density-functional calculations using an exact exchange potential for a two-dimensional electron gas (2DEG) formed in a GaAs single quantum well predict the existence of a spin-polarized phase, when an excited subband becomes slightly populated. Direct experimental evidence is obtained from low temperature and low excitation-power photoluminescence (PL) spectra which display the sudden appearance of a sharp emission peak below the energy of the optical transition from the first excited electron subband upon its occupation. The behavior of this PL feature in magnetic fields applied in-plane as well as perpendicular to the 2DEG indicate the formation of spin-polarized domains in the excited subband with in-plane magnetization. For it speaks also the strong enhancement of exchange-vertex corrections observed in inelastic light scattering spectra by spin-density excitations of a slightly occupied first-excited subband.

cond-mat.mes-hall↗

arXiv2003

Pseudo-spin Kondo effect versus hybridized molecular states in parallel Double Quantum Dots

A two quantum-dot device is coupled in parallel for studying the competition between the pseudo-spin Kondo effect and strongly hybridized molecular states. Cryogenic measurements are performed in the regime of weak coupling of the two dots to lead states under linear transport conditions. Detailed simulations verify the finding of the transition between the two different regimes.

cond-mat.mes-hall↗

arXiv2003

Nuclear spin relaxation probed by a single quantum dot

We present measurements on nuclear spin relaxation probed by a single quantum dot in a high-mobility electron gas. Current passing through the dot leads to a spin transfer from the electronic to the nuclear spin system. Applying electron spin resonance the transfer mechanism can directly be tuned. Additionally, the dependence of nuclear spin relaxation on the dot gate voltage is observed. We find electron-nuclear relaxation times of the order of 10 minutes.

cond-mat.mes-hall↗

arXiv2002

Spin blockade in ground state resonance of a quantum dot

We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing electron transport. This we identify as spin blockade at zero bias, possibly accompanied by a change in orbital momentum in subsequent dot ground states. We support this by probing the bias, magnetic field and temperature dependence of the transport spectrum. Weak violation of the blockade is modelled by detailed calculations of non-linear transport taking into account forbidden transitions.

cond-mat.mes-hall↗

arXiv2002

Universal flow diagram for the magnetoconductance in disordered GaAs layers

The temperature driven flow lines of the diagonal and Hall magnetoconductance data (G_{xx},G_{xy}) are studied in heavily Si-doped, disordered GaAs layers with different thicknesses. The flow lines are quantitatively well described by a recent universal scaling theory developed for the case of duality symmetry. The separatrix G_{xy}=1 (in units e^2/h) separates an insulating state from a spin-degenerate quantum Hall effect (QHE) state. The merging into the insulator or the QHE state at low temperatures happens along a semicircle separatrix G_{xx}^2+(G_{xy}-1)^2=1 which is divided by an unstable fixed point at (G_{xx},G_{xy})=(1,1).

cond-mat.mes-hall↗

arXiv2001

Superposition of photon- and phonon- assisted tunneling in coupled quantum dots

We report on electron transport through an artificial molecule formed by two tunnel coupled quantum dots, which are laterally confined in a two-dimensional electron system of an Al$_x$Ga$_{1-x}$As/GaAs heterostructure. Coherent molecular states in the coupled dots are probed by photon-assisted tunneling (PAT). Above 10 GHz, we observe clear PAT as a result of the resonance between the microwave photons and the molecular states. Below 8 GHz, a pronounced superposition of phonon- and photon-assisted tunneling is observed. Coherent superposition of molecular states persists under excitation of acoustic phonons.

cond-mat.mes-hall↗

arXiv2001

Exchange instability of the two-dimensional electron gas in semiconductor quantum wells

A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with the excited subband by applying a dc voltage. Direct evidence for this effect is obtained from low-temperature photoluminescence spectra which display the sudden renormalization of the intersubband energy $E_{01}$ upon the abrupt occupation of the first excited subband. Calculations within density-functional theory, which treat the 2D exchange potential {\it exactly}, show that this thermodynamical instability of the electron system is mainly driven by {\it intersubband} terms of the exchange Coulomb interaction. From temperature-dependent measurements the existence of a critical point at $T_c = 35\pm 5$ K is inferred.

cond-mat.mes-hall↗

arXiv2001

Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime

We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance R_{xx} in the quantum Hall effect regime can be well described by a hopping law (R_{xx} \propto exp{-(T_0/T)^p}) with p=0.6. We discuss this result in terms of variable range hopping in a Coulomb gap together with a dependence of the electron localization length on the energy in the gap. The value of the exponent p>0.5 shows that electron-electron interactions have to be taken into account in order to explain the occurrence of the quantum Hall effect in these samples, which have a three-dimensional single electron density of states.

cond-mat.mes-hall↗

arXiv2001

Closely spaced and separately contacted 2d electron and 2d hole gases by in situ focussed ion implantation

Separately contacted double layers of a 2d electron - 2d hole gases have been prepared in GaAs separated by thin AlGaAs barriers with thicknesses down to 15 nm. The molecular-beam-epitaxial growth was interrupted just before the barrier in order to use in situ focussed-ion-beam implantation to pattern contacts which extend underneath the barrier. The two charge gases form upon biasing the p- and n-type contacts underneath and above the barrier in forward direction and show independent transistor-like behavior.

cond-mat.mes-hall↗

arXiv2000

Coherent coupling of two quantum dots embedded in an Aharonov-Bohm ring

We define two laterally gated small quantum dots (~ 15 electrons) in an Aharonov-Bohm geometry in which the coupling between the two dots can be broadly changed. For weakly coupled quantum dots we find Aharonov-Bohm oscillations. In an intermediate coupling regime we concentrate on the molecular states of the double dot and extract the magnetic field dependence of the coherent coupling.

cond-mat.mes-hall↗

arXiv2000

Phonon emission and absorption in the fractional quantum Hall effect

We investigate the time dependent thermal relaxation of a two-dimensional electron system in the fractional quantum Hall regime where ballistic phonons are used to heat up the system to a non-equilibrium temperature. The thermal relaxation of a 2DES at $ν=1/2$ can be described in terms of a broad band emission of phonons, with a temperature dependence proportional to $T^4$. In contrast, the relaxation at fractional filling $ν=2/3$ is characterized by phonon emission around a single energy, the magneto-roton gap. This leads to a strongly reduced energy relaxation rate compared to $ν=1/2$ with only a weak temperature dependence for temperatures 150 mK $< T <$ 400 mK.

cond-mat.mes-hall↗