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Evidence for a Quantum Hall Insulator in an InGaAs/InP Heterostructure

D. T. N. de Lang·L. A. Ponomarenko·A. de Visser·C. Possanzini·S. M. Olsthoorn·A. M. M. Pruisken
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Abstract

We study the quantum critical behavior of the plateau-insulator (PI) transition in a low mobility InGaAs/InP heterostructure. By reversing the direction of the magnetic field (B) we find an averaged Hall resistance ρ_xy which remains quantized at the plateau value h/e^2 throughout the PI transition. We extract a critical exponent κ'= 0.57 +/- 0.02 for the PI transition which is slightly different from (and possibly more accurate than) the established value 0.42 +/- 0.04 as previously obtained from the plateau-plateau (PP) transitions.

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D. T. N. de Lang, L. A. Ponomarenko, A. de Visser, C. Possanzini, S. M. Olsthoorn, A. M. M. Pruisken. 2001-06-19. Evidence for a Quantum Hall Insulator in an InGaAs/InP Heterostructure. https://doi.org/10.1016/s1386-9477(01)00432-5

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