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Charge profile of surface doped C60

Samuel Wehrli·Didier Poilblanc·T. M. Rice
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Abstract

We study the charge profile of a C60-FET (field effect transistor) as used in the experiments of Schoen, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. The charge profile behaves similarly to the case of a continuous space-charge layer, in particular it is confined to a single interface layer for doping higher than ~0.3 electron (or hole) per C60 molecule. The morahedral disorder of the C60 molecules smoothens the structure in the density of states.

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Samuel Wehrli, Didier Poilblanc, T. M. Rice. 2001-12-07. Charge profile of surface doped C60. https://doi.org/10.1007/s100510170054

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