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Field Effect Magnetization Reversal in Ferromagnetic Semiconductor Quantum Wells

Byounghak Lee·T. Jungwirth·A. H. MacDonald
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Abstract

We predict that a novel bias-voltage assisted magnetization reversal process will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions with carrier induced ferromagnetism. The effect is due to strong exchange-coupling induced subband mixing that leads to electrically tunable hysteresis loops. Our model calculations are based on the mean-field theory of carrier induced ferromagnetism in Mn-doped quantum wells and on a semi-phenomenological description of the host II-VI semiconductor valence bands.

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Byounghak Lee, T. Jungwirth, A. H. MacDonald. 2001-06-26. Field Effect Magnetization Reversal in Ferromagnetic Semiconductor Quantum Wells. https://doi.org/10.1103/physrevb.65.193311

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