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Epitaxy and Magneto-transport properties of the diluted magnetic semiconductor p- Be(1-x)MnxTe

L. Hansen·D. Ferrand·G. Richter·M. Thierley·V. Hock·N. Schwarz·G. Reuscher·G. Schmidt·A. Waag·L. W. Molenkamp
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Abstract

We report on the MBE-growth and magnetotransport properties of p-type BeMnTe, a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10% using solid source MBE. A high p-type doping with nitrogen can be achieved by using an RF-plasma source. BeMnTe and BeTe layers have been characterized by magneto-transport measurements. At low temperatures, the BeMnTe samples exhibit a large anomalous Hall effect. A hysteresis in the anomalous Hall effect appears below 2.5K in the most heavily doped sample, which indicates the occurrence of a ferromagnetic phase.

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L. Hansen, D. Ferrand, G. Richter, M. Thierley, V. Hock, N. Schwarz, G. Reuscher, G. Schmidt, A. Waag, L. W. Molenkamp. 2001-07-31. Epitaxy and Magneto-transport properties of the diluted magnetic semiconductor p- Be(1-x)MnxTe. https://doi.org/10.1063/1.1416160

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