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Magnetic relaxation and critical current density of $MgB_2$ thin films

H. H. Wen·S. L. Li·Z. W. Zhao·H. Jin·Y. M. Ni·W. N. Kang·H. J. Kim·E. M. Choi·S. I. Lee
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Abstract

Magnetic relaxation and critical current density have been measured on a $MgB_2$ thin film in a wide region of temperature with the magnetic field up to 8 T. The irreversibility line has also been determined. It is found that the relaxation rate has a very weak temperature dependence below $1/2 T_c$ showing a clear residual relaxation rate at zero K, which cannot be easily explained as due to thermally activated flux creep. Furthermore the relaxation rate has a strong field dependence. The flux dynamics of thin films are very similar to that of high pressure synthesized bulks although the relaxation rate in thin film is systematically higher than that of a bulk sample. All the results here together with those from the bulk samples suggest that the flux dynamics may be dominated by the quantum effects, such as quantum fluctuation and tunneling.

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H. H. Wen, S. L. Li, Z. W. Zhao, H. Jin, Y. M. Ni, W. N. Kang, H. J. Kim, E. M. Choi, S. I. Lee. 2001-08-19. Magnetic relaxation and critical current density of $MgB_2$ thin films. https://doi.org/10.1103/physrevb.64.134505

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