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Optoelectric spin injection in semiconductor heterostructures without ferromagnet

A. G. Mal'shukov·K. A. Chao
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Abstract

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the $n$-doped region of the $pn$ junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.

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A. G. Mal'shukov, K. A. Chao. 2001-08-21. Optoelectric spin injection in semiconductor heterostructures without ferromagnet. https://doi.org/10.1103/physrevb.65.241308

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