arXiv subjects

K. A. Chao

Publications and source records attributed to K. A. Chao.

At least 19 recordsLinked to original sources

arXiv2005

Spin-Hall effect on edge magnetization and electric conductance of a 2D semiconductor strip

The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip, as well as the electric current in the longitudinal direction exhibit damped oscillations as a function of the width and strength of the Dresselhaus spin-orbit interaction. Cubic terms of this interaction are crucial for spin accumulation near the edges. As expected, no effect on the spin accumulation and electric conductance have been found in case of Rashba spin-orbit interaction.

cond-mat.mes-hall↗

arXiv2005

Strain-Induced Coupling of Spin Current to Nanomechanical Oscillations

We propose a setup which allows to couple the electron spin degree of freedom to the mechanical motions of a nanomechanical system not involving any of the ferromagnetic components. The proposed method employs the strain induced spin-orbit interaction of electrons in narrow gap semiconductors. We have shown how this method can be used for detection and manipulation of the spin flow through a suspended rod in a nanomechanical device.

cond-mat.mes-hall↗

arXiv2005

Spin-Hall conductivity of a disordered 2D electron gas with Dresselhaus spin-orbit interaction

The spin-Hall conductivity of a disordered 2D electron gas has been calculated for an arbitrary spin-orbit interaction. We have found that in the diffusive regime of electron transport, in accordance with previous calculations, the dc spin-Hall conductivity of a homogeneous system turns to zero due to impurity scattering when the spin-orbit coupling is represented only by the Rashba interaction. However, when the Dresselhaus interaction is taken into account, the spin-Hall current is not zero. We also considered the spin-Hall currents induced by an inhomogeneous electric field. It is shown that a time dependent electric charge induces a vortex of spin-Hall currents.

cond-mat.mes-hall↗

arXiv2005

Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems

Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift diffusion equation have been derived for studying spin polarization flow and spin accumulation under effect of the time dependent Rashba spin-orbit interaction in a semiconductor quantum well. The time dependent Rashba interaction is provided by time dependent electric gates of appropriate shapes. Several examples of spin manipulation by gates have been considered. Mechanisms and conditions for obtaining the stationary spin density and the induced rectified DC spin current are studied.

cond-mat.mes-hall↗

arXiv2004

Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit coupling

We performed path integral simulations of spin evolution controlled by the Rashba spin-orbit interaction in the semiclassical regime for chaotic and regular quantum dots. The spin polarization dynamics have been found to be strikingly different from the D'yakonov-Perel' (DP) spin relaxation in bulk systems. Also an important distinction have been found between long time spin evolutions in classically chaotic and regular systems. In the former case the spin polarization relaxes to zero within relaxation time much larger than the DP relaxation, while in the latter case it evolves to a time independent residual value. The quantum mechanical analysis of the spin evolution based on the exact solution of the Schroedinger equation with Rashba SOI has confirmed the results of the classical simulations for the circular dot, which is expected to be valid in general regular systems. In contrast, the spin relaxation down to zero in chaotic dots contradicts to what have to be expected from quantum mechanics. This signals on importance at long time of the mesoscopic echo effect missed in the semiclassical simulations.

cond-mat.mes-hall↗

arXiv2003

Spin Current Generation and Detection in the Presence of AC Gate

We predict that in a narrow gap III-V semiconductor quantum well or a wire an observable spin current can be generated with a time dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated AC current are discussed. An all-electric method of spin current detection is suggested, which measures the voltage on the gate in the vicinity of a 2D electron gas carrying a time dependent spin current. Both the generation and detection do not involve any optical or magnetic mediators.

cond-mat.mes-hall↗

arXiv2001

Quantum oscillations of spin current through a III-V semiconductor loop

We have investigated the transport of spin polarization through a classically chaotic semiconductor loop with a strong Rashba spin-orbit interaction. We found that if the escape time of a particle is long enough, the configuration averaged spin conductance oscillates strongly with the geometric spin phase. We predict a sizable rotation of spin polarization along its flowing path across the loop from the injector to the collector. We have also discovered a quantized universal spin relaxation in a 2D reservoir connected to such a semiconductor loop.

cond-mat.mes-hall↗

arXiv2001

Optoelectric spin injection in semiconductor heterostructures without ferromagnet

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the $n$-doped region of the $pn$ junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.

cond-mat.mes-hall↗

arXiv2000

Optical transitions in broken gap heterostructures

We have used an eight band model to investigate the electronic structures and to calculate the optical matrix elements of InAs-GaSb broken gap semiconductor heterostructures. The unusual hybridization of the conduction band states in InAs layers with the valence band states in GaSb layers has been analyzed in details. We have studied the dependence of optical matrix elements on the degree of conduction-valence hybridization, the tuning of hybridization by varying the width of the GaSb layers and/or InAs layers, and the sensitivity of quantized levels to this tuning. Large spin-orbit splitting in energy bands has been demonstrated. Our calculation can serve as a theoretical modeling for infrared lasers based on broken gap quantum well heterostructures.

cond-mat.mtrl-sci↗

arXiv1999

Waveguide diffusion modes and slowdown of D'yakonov-Perel' spin relaxation in narrow 2-D semiconductor channels

We have shown that in narrow 2D semiconductor channels the D'yakonov-Perel' spin relaxation rate is strongly reduced. This relaxation slowdown appears in special waveguide diffusion modes which determine the propagation of spin density in long channels. Experiments are suggested to detect the theoretically predicted effects. A possible application is a field effect transistor operated with injected spin current.

cond-mat.mes-hall↗

arXiv1999

Circuit Effect On The Current-Voltage Characteristics Of Ultrasmall Tunnel Junctions

We have used the method of generating functional in imaginary time to derive the current-voltage characteristics of a tunnel junction with arbitrary tunneling conductance, connected in series with an external impedance and a voltage source. We have shown that via the renormalized charging energy and the renormalized environment conductance, our nonperturbative expressions of the total action can be mapped onto the corresponding perturbative formulas. This provides a straightforward way to go beyond the perturbation theory. For the impedance being a pure resistance, we have calculated the conductance for various voltages and temperatures, and the results agree very well with experiments.

cond-mat.mes-hall↗

arXiv1999

The effect of the spin-orbit geometric phase on the spectrum of Aharonov-Bohm oscillations in a semiconductor mesoscopic ring

Taking into account the spin precession caused by the spin-orbit splitting of the conduction band in semiconductor quantum wells, we have calculated the Fourier spectra of conductance and state-density correlators in a 2D ring, in order to investigate the structure of the main peak corresponding to Aharonov-Bohm oscillations. In narrow rings the peak structure is determined by the competition between the spin-orbit and the Zeeman couplings. The latter leads to a peak broadening, and produces the peak splitting in the state-density Fourier spectrum. We have found an oscillation of the peak intensity as a function of the spin-orbit coupling constant, and this effect of the quantum interference caused by the spin geometric phase is destroyed with increasing Zeeman coupling.

cond-mat.mes-hall↗

arXiv1998

Population Inversion Induced by Resonant States in Semiconductors

We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been recently observed.

cond-mat.mtrl-sci↗

arXiv1997

Charging Ultrasmall Tunnel Junctions in Electromagnetic Environment

We have investigated the quantum admittance of an ultrasmall tunnel junction with arbitrary tunneling strength under an electromagnetic environment. Using the functional integral approach a close analytical expression of the quantum admittance is derived for a general electromagnetic environment. We then consider a specific controllable environment where a resistance is connected in series with the tunneling junction, for which we derived the dc quantum conductance from the zero frequency limit of the imaginary part of the quantum admittance. For such electromagnetic environment the dc conductance has been investigated in recent experiments, and our numerical results agree quantitatively very well with the measurements. Our complete numerical results for the entire range of junction conductance and electromagnetic environmental conductance confirmed the few existing theoretical conclusions.

cond-mat.mes-hall↗

arXiv1997

Light scattering from a periodically modulated two dimensional electron gas with partially filled Landau levels

We study light scattering from a periodically modulated two dimensional electron gas in a perpendicular magnetic field. If a subband is partially filled, the imaginary part of the dielectric function as a function of frequency contains additional discontinuities to the case of completely filled subbands. The positions of the discontinuities may be determined from the partial filling factor and the height of the discontinuity can be directly related to the modulation potential. The light scattering cross section contains a new peak which is absent for integer filling.

cond-mat.mes-hall↗

arXiv1997

Spin-density and charge-density excitations in quantum wires

We study an interacting electron gas in a quantum wire within the Hartree-Fock random phase approximation. Vertex corrections to the electron spin polarizability due to the electronic exchange interaction are important giving rise to spin-density excitations (SDE) with large oscillator strength shifted to lower energies with respect to single-particle states. The energy of intersubband SDE oscillates with the number of subbands occupied and has a minimum when a subband energy is close to the chemical potential. Intrasubband SDE have a linear dispersion at small wave-vectors. The corresponding sound velocity is reduced with respect to the Fermi velocity due to exchange interaction within the occupied subbands and exchange screening caused by virtual transitions to upper subbands. For intersubband and intrasubband charge-density excitations (CDE) vertex corrections are of less importance. For only a single subband occupied the screening of CDE and SDE in the Tomonaga-Luttinger model due to virtual transitions to upper subband is studied, where the virtual transitions are treated within the Hartree-Fock approximation. The calculations are in good qualitative agreement with experiments.

cond-mat.mes-hall↗

arXiv1996

Ultrasmall double junction in terms of orthogonal polynomials

The ``orthodox theory'' of a single electron double junction is dealt with. It is shown that the stationary solution of the underlying master equation allows the construction of any time-dependent solution in terms of orthogonal polynomials. The approach pays off if the stationary solution becomes simple. Two special cases are considered. We use the time-dependent solution to calculate the current noise in these cases.

cond-mat.mes-hall↗

arXiv1996

Electron Refrigeration in the Tunneling Approach

The qualities of electron refrigeration by means of tunnel junctions between superconducting and normal--metal electrodes are studied theoretically. A suitable approximation of the basic expression for the heat current across those tunnel junctions allows the investigation of several features of the device such as its optimal bias voltage, its maximal heat current, its optimal working point, and the maximally gained temperature reduction. Fortunately, the obtained results can be compared with those of a recent experiment.

cond-mat.mes-hall↗