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Spin-polarized Zener tunneling in (Ga,Mn)As

E. Johnston-Halperin·D. Lofgreen·R. K. Kawakami·D. K. Young·L. Coldren·A. C. Gossard·D. D. Awschalom
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Abstract

We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.

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E. Johnston-Halperin, D. Lofgreen, R. K. Kawakami, D. K. Young, L. Coldren, A. C. Gossard, D. D. Awschalom. 2001-10-02. Spin-polarized Zener tunneling in (Ga,Mn)As. https://doi.org/10.1103/physrevb.65.041306

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