arXiv subjects

E. Johnston-Halperin

Publications and source records attributed to E. Johnston-Halperin.

At least 19 recordsLinked to original sources

arXiv2025

Measuring the ferromagnetic resonance cone angle via static dipolar fields using diamond spins

We demonstrate quantitative measurement of the ferromagnetic resonance (FMR) precession cone angle of a micro-scale sample of vanadium tetracyanoethylene (V[TCNE]$_{x\sim 2}$) using diamond spins. V[TCNE]$_{x\sim 2}$ is a low-damping, low-magnetization ferrimagnet with potential for scalable spintronics applications. Our study is motivated by the persistent need for quantitative metrology to accurately characterize magnetic dynamics and relaxation. Recently, diamond spins have emerged as sensitive probes of static and dynamic magnetic signals. Unlike analog sensors that require additional calibration, diamond spins respond to magnetic fields via a frequency shift that can be compared with frequency standards. We use a spin echo-based approach to measure the precession-induced change to the static stray dipolar field of a pair of V[TCNE]$_{x\sim 2}$ discs under FMR excitation. Using these stray dipolar field measurements and micromagnetic simulations, we extract the precession cone angle. Additionally, we quantitatively measure the microwave field amplitude using the same diamond spins, thus forming a quantitative link between drive and response. We find that our V[TCNE]$_{x\sim 2}$ sample can be driven to a cone angle of at least 6$^{\circ}$ with a microwave field amplitude of only 0.53 G. This work highlights the power of diamond spins for local, quantitative magnetic characterization.

cond-mat.mtrl-sci↗

arXiv2024

Detection of spin pumping free of rectification and thermal artefacts in molecular-based ferromagnetic insulator V[TCNE]x~2

The molecular-based ferrimagnetic insulator V(TCNE)x has gained recent interest for efficient spin-wave excitation due to its low Gilbert damping ratio a=4E-5, and narrow ferromagnetic resonance linewidth f=1Oe. Here we report a clean spin pumping signal detected on V(TCNE)x/metal bilayer structures, free from spin rectification or thermal artifacts. On-chip coupling of microwave power is achieved via a coplanar waveguide to measure the in-plane angle-dependence of the inverse spin-Hall effect under ferromagnetic resonance conditions with respect to a constant external magnetic field. A signature of pure spin current from V(TCNE)x is observed in both platinum and permalloy metal layers, demonstrating the utility of V(TCNE)x for magnon spintronics studies in molecule/solid-state heterostructures.

cond-mat.mtrl-sci↗

arXiv2021

Raman Spectroscopy and Aging of the Low-Loss Ferrimagnet Vanadium Tetracyanoethylene

Vanadium tetracyanoethylene (V[TCNE]$_{x}$, $x\approx 2$) is an organic-based ferrimagnet with a high magnetic ordering temperature $\mathrm{T_C>600 ~K}$, low magnetic damping, and growth compatibility with a wide variety of substrates. However, similar to other organic-based materials, it is sensitive to air. Although encapsulation of V[TCNE]$_{x}$ with glass and epoxy extends the film lifetime from an hour to a few weeks, what is limiting its lifetime remains poorly understood. Here we characterize encapsulated V[TCNE]$_{x}$ films using confocal microscopy, Raman spectroscopy, ferromagnetic resonance and SQUID magnetometry. We identify the relevant features in the Raman spectra in agreement with \textit{ab initio} theory, reproducing $\mathrm{C=C,C\equiv N}$ vibrational modes. We correlate changes in the effective dynamic magnetization with changes in Raman intensity and in photoluminescence. Based on changes in Raman spectra, we hypothesize possible structural changes and aging mechanisms in V[TCNE]$_x$. These findings enable a local optical probe of V[TCNE]$_{x}$ film quality, which is invaluable in experiments where assessing film quality with local magnetic characterization is not possible.

cond-mat.mtrl-sci↗

arXiv2018

Tuning Spin Dynamics and Localization Near the Metal-Insulator Transition in Fe/GaAs heterostructures

We present a simultaneous investigation of coherent spin dynamics in both localized and itinerant carriers in Fe/GaAs heterostructures using ultrafast and spin-resolved pump-probe spectroscopy. We find that for excitation densities that push the transient Fermi energy of photocarriers above the mobility edge there exist two distinct precession frequencies in the ob-served spin dynamics, allowing us to simultaneously monitor both localized and itinerant states. For low magnetic fields (below 3 T) the beat frequency between these two excitations evolves linearly, indicating that the nuclear polarization is saturated almost immediately and that the hyperfine coupling to these two states is comparable, despite the 100x enhancement in nuclear polarization provided by the presence of the Fe layer. At higher magnetic fields (above 3 T) the Zeeman energy drives reentrant localization of the photocarriers. Subtracting the constant hyperfine contribution from both sets of data allows us to extract the Lande g-factor for each state and estimate their energy relative to the bottom of the conduction band, yielding -2.16 meV and 17 meV for localized and itinerant states, respectively. This work advances our fundamental understanding of spin-spin interactions between electron and nuclear spin species, as well as between localized and itinerant electronics states, and therefore has implications for future work in both spintronics and quantum information/computation.

cond-mat.mes-hall↗

arXiv2017

Patterned growth of crystalline Y$_{3}$Fe$_{5}$O$_{12}$ nanostructures with engineered magnetic shape anisotropy

We demonstrate patterned growth of epitaxial yttrium iron garnet (YIG) thin films using lithographically defined templates on gadolinium gallium garnet (GGG) substrates. The fabricated YIG nanostructures yield the desired crystallographic orientation, excellent surface morphology, and narrow ferromagnetic resonance (FMR) linewidth (~ 4 Oe). Shape-induced magnetic anisotropy is clearly observed in a patterned array of nanobars engineered to exhibit the larger coercivity (40 Oe) compared with that of continuous films. Both hysteresis loop and angle-dependent FMR spectra measurements indicate that the easy axis aligns along the longitudinal direction of the nanobars, with an effective anisotropy field of 195 Oe. Our work overcomes difficulties in patterning YIG thin films and provides an effective means to control their magnetic properties and magnetic bias conditions.

cond-mat.mes-hall↗

arXiv2017

Crystalline hydrogenation of graphene by STM tip-induced field dissociation of H$_2$

We have developed a novel method for crystalline hydrogenation of graphene on the nanoscale. Molecular hydrogen was physisorbed at 5 K onto pristine graphene islands grown on Cu(111) in ultrahigh vacuum. Field emission local to the tip of a scanning tunneling microscope dissociates H$_2$ and results in hydrogenated graphene. At lower coverage, isolated point defects are found on the graphene and are attributed to chemisorbed H on top and bottom surfaces. Repeated H$_2$ exposure and field emission yielded patches and then complete coverage of a crystalline $\sqrt{3}$ $\times$ $\sqrt{3}$ R30° phase, as well as less densely packed 3 $\times$ 3 and 4 $\times$ 4 structures. The hydrogenation can be reversed by imaging with higher bias voltage.

cond-mat.mes-hall↗

arXiv2016

Low loss spin wave resonances in organic-based ferrimagnet vanadium tetracyanoethylene thin films

We experimentally demonstrate high quality factor spin wave resonances in an encapsulated thin film of the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_\textit{x~2}$) coated on an a-plane sapphire substrate by low temperature chemical vapor deposition. The thickness standing wave modes are observed in a broad frequency range (1 GHz ~ 5 GHz) with high quality factor exceeding 3,200 in ambient air at room temperature, rivaling those of inorganic magnetic materials. The exchange constant of V[TCNE]$_\textit{x~2}$, a crucial material parameter for future study and device design of the V[TCNE]$_\textit{x~2}$, is extracted from the measurement with a value of $(4.61\pm 0.35)\times 10^{-16} \mathrm{\: m^{2}}$. Our result establishes the feasibility of using organic-based materials for building hybrid magnonic devices and circuits.

cond-mat.mes-hall↗

arXiv2015

Exchange-driven spin relaxation in ferromagnet/oxide/semiconductor heterostructures

We investigate electron spin relaxation in GaAs in the proximity of a Fe/MgO layer using spin-resolved optical pump-probe spectroscopy, revealing a strong dependence of the spin relaxation time on the strength of an exchange-driven hyperfine field. The temperature dependence of this effect reveals a strong correlation with carrier freeze out, implying that at low temperatures the free carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. This result resolves a long-standing and contentious question of the origin of the spin relaxation in GaAs at low temperature when a magnetic field is present. Further, this improved fundamental understanding paves the way for future experiments exploring the time-dependent exchange interaction at the ferromagnet/semiconductor interface and its impact on spin dissipation and transport in the regime of dynamically-driven spin pumping.

cond-mat.mes-hall↗

arXiv2015

Native defects in ultra-high vacuum grown graphene islands on Cu(111)

We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene on Cu(111). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the graphene lattice and are most likely single C vacancies. Dark defect types are observed in both graphene and Cu regions, and are likely point defects in the Cu surface. We also present data showing the importance of bias and tip termination to the appearance of the defects in STM images and the ability to achieve atomic resolution. Finally, we present tunneling spectroscopy measurements probing the influence of point defects on the local electronic landscape of graphene islands.

cond-mat.mes-hall↗

arXiv2015

Modification of electronic surface states by graphene islands on Cu(111)

We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using \emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sample surface with atomic spatial resolution on graphene islands versus regions of bare Cu(111) substrate. We find that the Rydberg-like series of image potential states is shifted toward lower energy over the graphene islands relative to Cu(111), indicating a decrease in the local work function, and the resonances have a much smaller linewidth, indicating reduced coupling to the bulk. In addition, we show the dispersion of the occupied Cu(111) Shockley surface state is influenced by the graphene layer, and both the band edge and effective mass are shifted relative to bare Cu(111).

cond-mat.mes-hall↗

arXiv2014

Long-range FMR driven spin pumping through a nonmagnetic insulator

Ferromagnetic resonance (FMR) driven spin pumping is an emerging technique for injection of a pure spin current from a ferromagnet (FM) into a non-magnetic (NM) material without an accompanying charge current. It is widely believed that this pumping proceeds exclusively via a short-range exchange interaction at the FM/NM interface. Here we report robust, long-range spin pumping from the ferrimagnetic double perovskite Sr2FeMoO6 (SFMO) into Pt across an insulating barrier up to 200 nm thick, and systematically rule out all known spurious effects. This result demonstrates dynamic spin injection over a distance far beyond the coupling range of the exchange interaction, exposing the need to consider other coupling mechanisms. The characteristic length scale for magnetic textures in Sr2FeMoO6 is approximately 150 nm, resulting from structural antiphase boundaries, thus raising the possibility that magnetic dipole coupling underlies the observed long range spin transfer. This discovery reveals a route to dynamic angular momentum transfer between a FM and a NM in the absence of mediation by itinerant electrons and promises new spin-functional devices employing long-range spin pumping.

cond-mat.mtrl-sci↗

arXiv2013

Spin accumulation detection of FMR driven spin pumping in silicon-based metal-oxide-semiconductor heterostructures

The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pumping has enabled the investigation of these dynamically injected currents across a wide variety of ferromagnetic materials. However, while this approach has proven to be an invaluable diagnostic for exploring the spin pumping process it requires strong spin-orbit coupling, thus substantially limiting the materials basis available for the detector/channel material (primarily Pt, W and Ta). Here, we report FMR driven spin pumping into a weak spin-orbit channel through the measurement of a spin accumulation voltage in a Si-based metal-oxide-semiconductor (MOS) heterostructure. This alternate experimental approach enables the investigation of dynamic spin pumping in a broad class of materials with weak spin-orbit coupling and long spin lifetime while providing additional information regarding the phase evolution of the injected spin ensemble via Hanle-based measurements of the effective spin lifetime.

cond-mat.mtrl-sci↗

arXiv2011

Enhancement of Spin Injection into Graphene by Water Dipping

We immerse single layer graphene spin valves into purified water for a short duration (<1 min) and investigate the effect on spin transport. Following water immersion, we observe an enhancement in nonlocal magnetoresistance. Additionally, the enhancement of spin signal is correlated with an increase in junction resistance, which produces an increase in spin injection efficiency. This study provides a simple way to improve the signal magnitude and establishes the robustness of graphene spin valves to water exposure, which enables future studies involving chemical functionalization in aqueous solution.

cond-mat.mtrl-sci↗

arXiv2011

Defect states and disorder in charge transport in semiconductor nanowires

We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these regimes provides guidance for the extension of existing models and directly informs the design of next-generation nanoscale electronic devices.

cond-mat.mes-hall↗

arXiv2011

Electrical spin injection from an organic-based ferrimagnet in a hybrid organic/inorganic heterostructure

We report the successful extraction of spin polarized current from the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x (x~2, TCNE: tetracyanoethylene; TC ~ 400 K, EG ~ 0.5 eV, s ~ 10-2 S/cm) and its subsequent injection into a GaAs/AlGaAs light-emitting diode (LED). The spin current tracks the magnetization of V[TCNE]x~2, is weakly temperature dependent, and exhibits heavy hole / light hole asymmetry. This result has implications for room temperature spintronics and the use of inorganic materials to probe spin physics in organic and molecular systems.

cond-mat.mtrl-sci↗

arXiv2004

Fabrication of Conducting Si Nanowire Arrays

The recent development of the superlattice nanowire pattern transfer (SNAP) technique allows for the fabrication of arrays of nanowires at a diameter, pitch, aspect ratio, and regularity beyond competing approaches. Here, we report the fabrication of conducting Si nanowire arrays with wire widths and pitches of 10-20 nm and 40-50 nm, respectively, and resistivity values comparable to the bulk through the selection of appropriate silicon-on-insulator substrates, careful reactive-ion etching, and spin-on glass doping. These results promise the realization of interesting nano-electronic circuits and devices, including chemical and biological sensors, nano-scale mosaics for molecular electronics, and ultra-dense field-effect transistor (FET) arrays.

cond-mat.mtrl-sci↗

arXiv2003

Independent Electronic and Magnetic Doping in (Ga,Mn)As Based Digital Ferromagnetic Heterostructures

Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving independent control of electronic doping in the ferromagnetic semiconductor (Ga,Mn)As. Samples are comprised of superlattices of 0.5 monolayer (ML) MnAs alternating with 20 ML GaAs and are grown by low temperature (230 C) atomic layer epitaxy (ALE). This allows for the reduction of excess As incorporation and hence the number of charge-compensating As-related defects. We grow a series of samples with either Be or Si doping in the GaAs spacers (p- and n-type dopants, respectively), and verify their structural quality by in situ reflection high-energy electron diffraction (RHEED) and ex situ x-ray diffraction. Magnetization measurements reveal ferromagnetic behavior over the entire doping range, and show no sign of MnAs precipitates. Finally, magneto-transport shows the giant planar Hall effect and strong (20%) resistance fluctuations that may be related to domain wall motion.

cond-mat.mtrl-sci↗

arXiv2002

Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers

We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show that the higher ferromagnetic transition temperature results from an enhanced free hole density. The data also indicate that, in addition to the carrier concentration, the sample thickness limits the maximum attainable Curie temperature in this material - suggesting that the free surface of Ga1-xMnxAs epilayers is important in determining their physical properties.

cond-mat.mtrl-sci↗