Searcharxiv⌕ Search

arXiv · cond-mat/0110134

Quantum confinement in CdSe nanocrystallites

Abstract

Quantum confinement increases the spacing between energy levels as the nanocrystallite size is decreased. Its qualitative features hold both for states localized near the center of a nanocrystallite and those near the surface, such as states due primarily to dangling bonds. However, different quantitative features are expected because of the different size constraints on each of these states. Since the majority of atoms in a typical nanocrystallite are on the surface, contrasting confinement effects between these two types may prove useful in predicting how surface state dependent properties, such as optical absorption, change with the size of the nanocrystallite. By applying first principles pseudopotential methods to indium doped, uncapped CdSe nanocrystallites containing 17 and 34 atoms, we identify center and surface localized states. Using the lowest occupied energy state as a reference, the energy of a state localized near the center is found to increase 24 mRy from the 34 to 17 atom nanocrystallite. An equivalent surface state within the two cases studied is not found, but the energy level spacing is speculated to increase on the order of 100 mRy between the 34 and 17 atom cases based on states that are highly local to the surface, but not equivalent. Furthermore, we find it's necessary for the impurity to sit at the center of the nanocrystallite in order for the impurity states to be electrically active.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

K. E. Andersen, C. Y. Fong, W. E. Pickett. 2001-10-07. Quantum confinement in CdSe nanocrystallites. https://doi.org/10.1016/s0022-3093(01)01132-2

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Photoinduced topological phase transition in monolayer 1T$^\prime$-MoS$_2$

We investigate the systematic competition between perpendicular electric field and circularly polarized light in nonequilibrium topological phases of monolayer 1T$^\prime$--MoS$_2$ using a low-energy $k\!\cdot\!p$ Hamiltonian and Floquet theory. The off-resonant field generates spin- and valley-dependent mass corrections that reshape the Berry curvature (BC) and shift the conditions for band inversion. By evaluating the quasienergy bands, BC, and spin- valley-resolved Chern numbers, we identify a sequence of light and electric field controlled topological transitions by gap closing. Depending on the Floquet coupling strength and the electric-field parameter, the system evolves between the equilibrium quantum spin Hall (QSH) state and a set of driven phases including spin-polarized quantum Hall insulator (S-QHI), band insulator (BI) and photo-induced quantum Hall insulator (P-QHI) regimes. The results establish 1T$^\prime$--MoS$_2$ as a tunable platform where circular driving selectively manipulates spin and valley degrees of freedom, enabling controlled access to non-equilibrium topological phases in transition metal dichalcogenides (TMDs).

cond-mat.mes-hall↗

Engineering Fractional Topological Superconductors: Numerical Bogoliubov-de Gennes Analysis for Parafermion Realization in FCI-Superconductor Heterostructures

We propose a pathway to engineer Z3 parafermion zero modes in fractional Chern insulator-superconductor heterostructures. Using numerical Bogoliubov-de Gennes calculations and edge-theory analysis, we demonstrate how realistic materials such as MoTe2/NbSe2 can host parafermionic excitations with experimentally accessible signatures, including fractional Josephson effects, localized zero modes, interferometry, and thermal transport. Our work outlines concrete strategies for experimentally accessing parafermionic excitations in FCI-superconductor heterostructures.

cond-mat.mes-hall↗

Disentangling Spin Pumping and Two-Magnon Scattering Contributions to Gilbert Damping in YIG/V Bilayers

In this work, we investigate the magnetic damping and spin pumping response of YIG-based bilayers incorporating vanadium (V) as the normal metal layer via broadband ferromagnetic resonance (FMR) measurements as a function of YIG thickness. We show that the apparent enhancement of the Gilbert damping in YIG/V bilayers cannot be solely attributed to spin pumping. Instead, two-magnon scattering (TMS) plays a dominant role in governing the thickness dependence of the damping in the nanometer regime. By applying a thickness-dependent damping model that accounts for both spin pumping and two-magnon scattering contributions, we successfully disentangle the different relaxation contributions. Our analysis reveals that neglecting two-magnon scattering leads to an overestimation of the spin-pumping contribution and consequently to unphysically large values of the effective spin-mixing conductance. After isolating the intrinsic spin pumping contribution, we extract a thickness-independent effective spin-mixing conductance of $g^{\uparrow\downarrow}_{\mathrm{eff}} = 1.33 \times 10^{18}~\mathrm{m^{-2}}$. These findings provide a more accurate framework for quantifying spin transport parameters in FM/HM systems and emphasize the necessity of accounting for extrinsic damping mechanisms when interpreting spin pumping and inverse spin Hall effect experiments.

cond-mat.mes-hall↗