SearcharxivSearch

arXiv subjects

C. Y. Fong

Publications and source records attributed to C. Y. Fong.

15 recordsLinked to original sources

Spintronic properties and stability of the half-Heusler alloys LiMnZ (Z=N, P, Si)

Li-based half-Heusler alloys have attracted much attention due to their potential applications in optoelectronics and because they carry the possibility of exhibiting large magnetic moments for spintronic applications. Due to their similarities to metastable zinc blende half-metals, the half-Heusler alloys $β$-LiMnZ (Z = N, P and Si) were systematically examined for their electric, magnetic and stability properties at optimized lattice constants and strained lattice constants that exhibit half-metallic properties. Other phases of the half-Heusler structure ($α$ and $γ$) are also reported here, but they are unlikely to be grown. The magnetic moments of these stable Li-based alloys are expected to reach as high as 4 $μ_{\mathrm{B}}$ per unit cell when Z = Si and 5 $μ_{\mathrm{B}}$ per unit cell when Z = N and P, however the antiferromagnetic spin configuration is energetically favored when Z is a pnictogen. $β$-LiMnSi at a lattice constant 14\% larger than its equilibrium lattice constant is a promising half-metal for spintronic applications due to its large magnetic moment and vibrational stability. The modified Slater--Pauling rule for these alloys is determined. Finally, a plausible method for developing half-metallic Li$_x$MnZ at equilibrium, by tuning $x$, is investigated, but, unlike tetragonalization, this type of alloying introduces local structural changes that destroy the half-metallicity.

cond-mat.mtrl-sci

The scaling properties of exchange and correlation holes of the valence shell of second row atoms

We study the exchange and correlation hole of the valence shell of second row atoms using variational Monte Carlo techniques, especially correlated estimates, and norm-conserving pseudopotentials. The well-known scaling of the valence shell provides a tool to probe the behavior of exchange and correlation as a functional of the density and thus test models of density functional theory. The exchange hole shows an interesting competition between two scaling forms -- one caused by self-interaction and another that is approximately invariant under particle number, related to the known invariance of exchange under uniform scaling to high density and constant particle number. The correlation hole shows a scaling trend that is marked by the finite size of the atom relative to the radius of the hole. Both trends are well captured in the main by the Perdew-Burke-Ernzerhof generalized-gradient approximation model for the exchange-correlation hole and energy.

physics.atom-ph

First principles studies of a Xe atom adsorbed on Nb(110) surface

We study adsorption sites of a single Xe adatom on Nb(110) surface using a density functional theory approach: The on-top site is the most favorable position for the adsorption. We compare the binding features of the present study to earlier studies of a Xe adatom on close-packed (111) surface of face-centered cubic metals. The different features are attributed through a microscopic picture to the less than half filled d-states in Nb.

cond-mat.mtrl-sci

Comparison of two structures for transition-metal-based half Heusler alloys exhibiting fully compensated half metallicity

We search for new fully compensated half metals, in which only one electronic spin channel is conducting and there exists no net magnetic moment. We focus on half Heusler alloys and we examine the physical consequence of different crystal structures found in the literature for these compounds, XMnZ, with a transition metal element, such as Cr, Mn, and Fe for X and a nonmetallic element, such as P, Sb and Si for Z. The structures differ in the placement of voids in the L2$_1$ structure of the full Heulser alloy. One structure has the void at (1/4, 3/4, 1/4)a and the other places the void at (0.0, 0.0, 1/2)a. The first structure is expected to have greater d-p hybridization between Mn and the Z atom. The other exhibits strong d-d hybridization between the nearest neighboring transition metal elements. Five XMnZ compounds are considered along with the previously studied CrMnSb in the second structure, which serves as a reference. Besides the CrMnSb, only one other alloy, MnMnSi, shows fully compensated half metallic properties in both structures. Both these alloys obey the Slater-Pauling electron counting rule for half Hesuler alloys. The differences between CrMnSb and MnMnSi in the two structures are discussed based on their atomic properties. In the search for fully compensated half metals in transition metal-based half Heusler alloys, we suggest using the counting rule as a guide.

cond-mat.mtrl-sci

Studies of single doping of Mn and Fe in Si to deduce simple guidelines in selecting transition metal elements for growing Si-based spintronic materials

Single dopings of Mn and Fe in Si are investigated using 8-, 64-, and 216-atom supercells and a first-principles method based on density functional theory. Between the two transition metal elements (TMEs), atom sizes play an essential role in determining the contraction or the expansion of neighboring atoms around the TME dopant at a substitutional site. At a tetrahedral interstitial site, there is only expansion. Magnetic moments/TME at the two sites are calculated. Physical origins for these inter-related properties are discussed. A few suggestions about the growth of these Si-based alloys are given.

cond-mat.mtrl-sci

An efficient procedure for the development of optimized Projector Augmented Wave basis functions

In the Projector Augmented Wave (PAW) method, a local potential, basis functions, and projector functions form an All-Electron (AE) basis for valence wave functions in the application of Density Functional Theory (DFT). The construction of these potentials, basis functions and projector functions for each element can be complex, and several codes capable of utilizing the PAW method have been otherwise prevented from its use by the lack of PAW basis sets for all atoms. We have developed a procedure that improves the ease and efficiency of construction of PAW basis sets. An evolutionary algorithm is used to optimize PAW basis sets to accurately reproduce scattering properties of the atom and which converge well with respect to the energy cutoff in a planewave basis. We demonstrate the procedure for the case of Ga with the 4s, 4p, and 3d electrons treated as valence. Calculations with this Ga PAW basis set are efficient and reproduce results of linearized augmented plane wave (LAPW) calculations. We also discuss the relationship between total energy convergence with respect to the energy cutoff and the magnitude of the matching radius of the PAW set.

cond-mat.mtrl-sci

Origin of large moments in Mn$_x$Si$_{1-x}$ at small x

Recently, the magnetic moment/Mn, $M$, in Mn$_x$Si$_{1-x}$ was measured to be 5.0 $μ_B$/Mn, at $x$ =0.1%. To understand this observed $M$, we investigate several Mn$_x$Si$_{1-x}$ models of alloys using first-principles density functional methods. The only model giving $M = 5.0$ was a 513-atom cell having the Mn at a substitutional site, and Si at a second-neighbor interstitial site. The observed large moment is a consequence of the weakened d-p hybridization between the Mn and one of its nearest neighbor Si atoms, resulting from the introduction of the second-neighbor interstitial Si. Our result suggests a way to tune the magnetic moments of transition metal doped semiconductors.

cond-mat.mtrl-sci

Half metallic digital ferromagnetic heterostructure composed of a $δ$-doped layer of Mn in Si

We propose and investigate the properties of a digital ferromagnetic heterostructure (DFH) consisting of a $δ$-doped layer of Mn in Si, using \textit{ab initio} electronic-structure methods. We find that (i) ferromagnetic order of the Mn layer is energetically favorable relative to antiferromagnetic, and (ii) the heterostructure is a two-dimensional half metallic system. The metallic behavior is contributed by three majority-spin bands originating from hybridized Mn-$d$ and nearest-neighbor Si-$p$ states, and the corresponding carriers are responsible for the ferromagnetic order in the Mn layer. The minority-spin channel has a calculated semiconducting gap of 0.25 eV. Analysis of the total and partial densities of states, band structure, Fermi surfaces and associated charge density reveals the marked two-dimensional nature of the half metallicity. The band lineup is found to be favorable for retaining the half metal character to near the Curie temperature ($T_{C}$). Being Si based and possibly having a high $T_{C}$ as suggested by an experiment on dilutely doped Mn in Si, the heterostructure may be of special interest for integration into mature Si technologies for spintronic applications.

cond-mat.mtrl-sci

Half-metallic properties of atomic chains of carbon-transition metal compounds

We found that magnetic ground state of one-dimensional atomic chains of carbon-transition metal compounds exhibit half-metallic properties. They are semiconductors for one spin-direction, but show metallic properties for the opposite direction. The spins are fully polarized at the Fermi level and net magnetic moment per unit cell is an integer multiple of Bohr magneton. The spin-dependent electronic structure can be engineered by changing the number of carbon and type of transition metal atoms. These chains, which are stable even at high temperature and some of which keep their spin-dependent electronic properties even under moderate axial strain, hold the promise of potential applications in nanospintronics.

cond-mat.mtrl-sci

Structural and electronic properties of pentacene molecule and molecular pentacene solid

The structural and electronic properties of a single pentacene molecule and a pentacene molecular crystal, an organic semiconductor, are examined by a first-principles method based on the generalized gradient approximation of density functional theory. Calculations were carried out for a triclinic unit cell containing two pentacene molecules. The bandwidths of the valence and conduction bands which determine the charge migration mechanism are found to depend strongly on the crystallographic direction. Along the triclinic reciprocal lattice vectors A and B which are orientated approximately perpendicular to the molecular axes the maximal valence (conduction) band width amounts to only 75 (59) meV, even smaller values are obtained for the C direction parallel to molecular axes even less. Along the stacking directions A+B and A-B, however, the maximal valence (conduction) band width is found to reach 145 (260) meV. The value for the conduction band width is larger than estimates for the polaron binding energy but significantly smaller than recent results obtained by semiempirical methods. The single molecule has a HOMO-LUMO gap of about 1.1 eV as deduced from the Kohn-Sham eigenvalue differences. When using the self-consistent field method, which is expected to yield more reliable results, a value of 1.64 eV is obtained. The theoretical value for the band gap in the molecular solid amounts to 1.0 eV at the Gamma-point.

cond-mat.mtrl-sci

Quantum confinement in CdSe nanocrystallites

Quantum confinement increases the spacing between energy levels as the nanocrystallite size is decreased. Its qualitative features hold both for states localized near the center of a nanocrystallite and those near the surface, such as states due primarily to dangling bonds. However, different quantitative features are expected because of the different size constraints on each of these states. Since the majority of atoms in a typical nanocrystallite are on the surface, contrasting confinement effects between these two types may prove useful in predicting how surface state dependent properties, such as optical absorption, change with the size of the nanocrystallite. By applying first principles pseudopotential methods to indium doped, uncapped CdSe nanocrystallites containing 17 and 34 atoms, we identify center and surface localized states. Using the lowest occupied energy state as a reference, the energy of a state localized near the center is found to increase 24 mRy from the 34 to 17 atom nanocrystallite. An equivalent surface state within the two cases studied is not found, but the energy level spacing is speculated to increase on the order of 100 mRy between the 34 and 17 atom cases based on states that are highly local to the surface, but not equivalent. Furthermore, we find it's necessary for the impurity to sit at the center of the nanocrystallite in order for the impurity states to be electrically active.

cond-mat.mes-hall

Real-space local polynomial basis for solid-state electronic-structure calculations: A finite-element approach

We present an approach to solid-state electronic-structure calculations based on the finite-element method. In this method, the basis functions are strictly local, piecewise polynomials. Because the basis is composed of polynomials, the method is completely general and its convergence can be controlled systematically. Because the basis functions are strictly local in real space, the method allows for variable resolution in real space; produces sparse, structured matrices, enabling the effective use of iterative solution methods; and is well suited to parallel implementation. The method thus combines the significant advantages of both real-space-grid and basis-oriented approaches and so promises to be particularly well suited for large, accurate ab initio calculations. We develop the theory of our approach in detail, discuss advantages and disadvantages, and report initial results, including the first fully three-dimensional electronic band structures calculated by the method.

cond-mat

The Exchange-correlation Hole of the Si Atom, A Quantum Monte Carlo Study

We have studied the exchange-correlation hole and pair correlation function in the valence shell of the ground-state of the Si atom, using accurate Slater-Jastrow wavefunctions and the Variational Monte Carlo method. The exchange-correlation hole shows a number of interesting features caused by the open shell structure of Si, including a marked transition from efficient to poor screening behavior as a test majority-spin electron is moved from the center of a valence 3p orbital onto the axis perpendicular to the occupied 3p orbitals. This behavior results from the dramatic difference in the exchange hole in the two cases, which is partially compensated by a corresponding anisotropy in the correlation hole. In addition we observe an anisotropic change in the spin density induced by Coulomb correlation, reducing the spatial overlap between the different spin-components of the density and contributing to the anisotropy of the correlation hole. In contrast to the longer range features, we find that the "on-top" correlation hole is well described by linear density functional theory, for a large range of local density and magnetization.

physics.atom-ph

Quantum heat transfer through an atomic wire

We studied the phononic heat transfer through an atomic dielectric wire with both infinite and finite lengths by using a model Hamiltonian approach. At low temperature under ballistic transport, the thermal conductance contributed by each phonon branch of a uniform and harmonic chain cannot exceed the well-known value which depends linearly on temperature but is material independent. We predict that this ballistic thermal conductance will exhibit stepwise behavior as a function of temperature. By performing numerical calculations on a more realistic system, where a small atomic chain is placed between two reservoirs, we also found resonance modes, which should also lead to the stepwise behavior in the thermal conductance.

cond-mat

The structural and electronic properties of germanium clathrates

The structural and electronic properties of germanium clathrates Ge$_{46}$ and K$_8$Ge$_{46}$ are studied by first principles calculations within the local density approximation. The equilibrium structures are obtained by {\em ab initio} pseudopotential calculation combined with dynamic minimizations. The clathrate structure is found as a low energy phase for germanium. The electronic band structures for Ge$_{46}$ clathrates are calculated and the band gap is found to be considerably larger than that of the diamond phase. Due to the effect of pentagonal rings, strong similarity in electronic properties between clathrate and Ge$_{24}$ fullerene structure are found. The effect of doping clathrate cages with metal atoms are examined. The K$_8$Ge$_{46}$ clathrate is found to be metallic with the conduction bands only slightly modified by K dopants.

cond-mat