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Enhanced tunneling across nanometer-scale metal-semiconductor interfaces

G. D. J. Smit·S. Rogge·T. M. Klapwijk
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Abstract

We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111) with an STM-tip. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be about 10^4 times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and therefore a greatly increased contribution of tunneling to the electrical transport.

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G. D. J. Smit, S. Rogge, T. M. Klapwijk. 2002-02-14. Enhanced tunneling across nanometer-scale metal-semiconductor interfaces. https://doi.org/10.1063/1.1467980

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