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Reduction Of Spin Injection Efficiency by Interface Spin Scattering

R. M. Stroud·A. T. Hanbicki·Y. D. Park·A. G. Petukhov·B. T. Jonker·G. Itskos·G. Kioseoglou·M. Furis·A. Petrou
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Abstract

We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering. An inverse correlation between spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-LEDs with spin injection efficiencies of 0 to 85%.

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R. M. Stroud, A. T. Hanbicki, Y. D. Park, A. G. Petukhov, B. T. Jonker, G. Itskos, G. Kioseoglou, M. Furis, A. Petrou. 2001-10-26. Reduction Of Spin Injection Efficiency by Interface Spin Scattering. https://doi.org/10.1103/physrevlett.89.166602

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