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Photon recycling white light emitting diode based on InGaN multiple quantum well heterostructure

V. V. Nikolaev·M. E. Portnoi·I. Eliashevich
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Abstract

A numerical method based on the transfer matrix technique is developed to calculate the luminescence spectra of complex layered structures with photon recycling. Using this method we show a strong dependence of the emission spectra on the optical eigenmode structure of the device. The enhancement of the photon recycling and the LED external efficiency can be achieved by placing the active regions inside single or coupled microcavities.

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V. V. Nikolaev, M. E. Portnoi, I. Eliashevich. 2001-11-20. Photon recycling white light emitting diode based on InGaN multiple quantum well heterostructure. https://doi.org/10.1002/1521-396x(200101)183%3A1%3C177%3A%3Aaid-pssa177%3E3.0.co%3B2-h

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