arXiv · cond-mat/0201396
Towards quantum well hot hole lasers
Abstract
It should be possible to improve hot-hole laser performance by moving from bulk materials to a quantum well structure. The extra design parameters enable us to alter the band structure by changing the crystal orientation of the growth direction; to use the well width to shift the subband offsets, enabling the effect of the LO phonon scattering cut-off to be controlled; and to use modulation doping to ensure a high hole concentration to increase the gain without the dopants being present in the gain region. We present the first simulations of THz quantum well hot-hole lasers that can produce inversion and optical gain.
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P. Kinsler, W. Th. Wenckebach. 2014-08-01. Towards quantum well hot hole lasers. https://arxiv.org/abs/cond-mat/0201396
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