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Field Suppression of the Density-of-States: A Mechanism for Large Linear Magnetoresistance

D. P. Young·J. F. DiTusa·R. G. Goodrich·D. Hall·J. Anderson·S. Guo·Julia Y. Chan·P. W. Adams
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Abstract

Hall, resistivity, magnetization, and thermoelectric power measurements were performed on single crystals of the highly anisotropic layered metal LaSb2. A 100-fold linear magnetoresistance (MR) was observed in fields up to 45 T, with no indication of saturation. We show that the MR is associated with a magnetic-field-dependent holelike carrier density, n(H) \propto 1/H. The effect is orbital, depending upon the component of the magnetic field normal to the layers. At low temperature, a field of 9 T reduces the carrier density by more than an order of magnitude.

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D. P. Young, J. F. DiTusa, R. G. Goodrich, D. Hall, J. Anderson, S. Guo, Julia Y. Chan, P. W. Adams. 2002-02-13. Field Suppression of the Density-of-States: A Mechanism for Large Linear Magnetoresistance. https://arxiv.org/abs/cond-mat/0202220

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