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Ferromagnetic imprinting of spin polarization in a semiconductor

C. Ciuti·J. P. McGuire·L. J. Sham
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Abstract

We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a mechanism to manipulate the spin polarization vector. In the case of unpolarized excitation, this ballistic effect produces spontaneous electron spin coherence and nuclear polarization in the semiconductor, as recently observed by time-resolved Faraday rotation experiments. We investigate the dependence of the spin reflection on the Schottky barrier height and the doping concentration in the semiconductor and suggest control mechanisms for possible device applications.

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C. Ciuti, J. P. McGuire, L. J. Sham. 2002-03-13. Ferromagnetic imprinting of spin polarization in a semiconductor. https://doi.org/10.1103/physrevlett.89.156601

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