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Nonlinear behavior in the Thermopower of Doped Carbon Nanotubes Due to Strong, Localized States

Y. -M Choi·D. -S. Lee·R. Czerw·P. -W. Chiu·N. Grobert·M. Terrones·M. Reyes-Reyes·H. Terrones·J. -C. Charlier·P. M. Ajayan·S. Roth·D. L. Carroll·Y. -W. Park
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Abstract

The temperature dependent thermoelectric power (TEP) of boron and nitrogen doped multi-walled carbon nanotube mats has been measured showing that such dopants can be used to modify the majority conduction from p-type to n-type. The TEP of boron doped nanotubes is positive, indicating hole-like carriers. In contrast, the nitrogen doped material exhibits negative TEP over the same temperature range, suggesting electron-like conduction. Therefore, the TEP distinct nonlinearites are primarily due to the formation of donor and acceptor states in the B- and N- doped materials. The sharply varying density of states used in our model can be directly correlated to the scanning tunneling spectroscopy studies of these materials.

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Y. -M Choi, D. -S. Lee, R. Czerw, P. -W. Chiu, N. Grobert, M. Terrones, M. Reyes-Reyes, H. Terrones, J. -C. Charlier, P. M. Ajayan, S. Roth, D. L. Carroll, Y. -W. Park. 2002-04-11. Nonlinear behavior in the Thermopower of Doped Carbon Nanotubes Due to Strong, Localized States. https://doi.org/10.1021/nl034161n

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