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The difference between Si and Ge(001) surfaces in the initial stages of growth

G. Brocks·J. H. Snoeijer·P. J. Kelly·H. J. W. Zandvliet·Bene Poelsema
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Abstract

The initial stages of growth of Ge and Si on the Ge(001) surface are studied and compared to growth on the Si(001) surface. Metastable rows of diluted ad-dimers exist on both surfaces as intermediate stages of epitaxial growth. Unexpectedly, for Ge(001) these rows are found exclusively in the <310> directions, whereas on Si(001) the preferred direction is <110>. This qualitative difference between Si and Ge surfaces reflects the subtle difference in the chemistry of these two elements, which has direct consequences for epitaxial growth on these surfaces.

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G. Brocks, J. H. Snoeijer, P. J. Kelly, H. J. W. Zandvliet, Bene Poelsema. 2002-05-28. The difference between Si and Ge(001) surfaces in the initial stages of growth. https://arxiv.org/abs/cond-mat/0205600

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