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Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates

C. Ciuti·J. P. McGuire·L. J. Sham
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Abstract

A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.

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C. Ciuti, J. P. McGuire, L. J. Sham. 2002-10-09. Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates. https://doi.org/10.1063/1.1530737

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