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Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode

Takeshi Nakanishi·Adrian Bachtold·Cees Dekker
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Abstract

We report a numerical study of the tunnel conductance through the Schottky barrier at the contact between a semiconducting carbon nanotube and a metal electrode. In a planar gate model the asymmetry between the p--doped and the n--doped region is shown to depend mainly on the difference between the electrode Fermi level and the band gap of carbon nanotubes. We quantitatively show how the gate/nanotube distance is important to get large on--off ratios. We explain the bend of the current versus gate voltage as the transition from a thermal--activation region to a tunneling region. A good agreement is obtained with experimental results for carbon nanotubes field--effect transistors.

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Takeshi Nakanishi, Adrian Bachtold, Cees Dekker. 2002-06-24. Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode. https://doi.org/10.1103/physrevb.66.073307

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