Does $m^*g^*$ diverge at a finite electron density in silicon inversion layers?

M. P. Sarachik; S. A. Vitkalov

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Does $m^g^$ diverge at a finite electron density in silicon inversion layers?

M. P. Sarachik·S. A. Vitkalov

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Abstract

For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density $n_0$. Analysis of these magnetotransport experiments yields a product $g^*m^*$ that diverges at this density (here $g^*$ is the interaction-enhanced Landé $g$-factor and $m^*$ is the effective mass). This claim has been disputed based on direct determinations of the $g^*m^*$ obtained from Shubnikov-de Haas measurements. We briefly review these experiments, and possible sources of the discrepancies.

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M. P. Sarachik, S. A. Vitkalov. 2002-09-04. Does $m^*g^*$ diverge at a finite electron density in silicon inversion layers?. https://arxiv.org/abs/cond-mat/0209113

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