arXiv subjects

S. A. Vitkalov

Publications and source records attributed to S. A. Vitkalov.

At least 19 recordsLinked to original sources

arXiv2021

Temperature Damping of Magneto-Intersubband Resistance Oscillations in Magnetically Entangled Subbands

Magneto-intersubband resistance oscillations (MISO) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields tilted from the normal to the 2D electron layer at different temperatures $T$. Decrease of MISO amplitude with temperature increase is observed. At moderate tilts the temperature decrease of MISO amplitude is consistent with decrease of Dingle factor due to reduction of quantum electron lifetime at high temperatures. At large tilts new regime of strong MISO suppression with the temperature is observed. Proposed model relates this suppression to magnetic entanglement between subbands, leading to beating in oscillating density of states. The model yields corresponding temperature damping factor: $A_{MISO}(T)=X/\sinh(X)$, where $X=2π^2kTδf$ and $δf$ is difference frequency of oscillations of density of states in two subbands. This factor is in agreement with experiment. Fermi liquid enhancement of MISO amplitude is observed.

cond-mat.mes-hall↗

arXiv2021

Microwave-Induced Magneto-Intersubband Scattering in a Square Lattice of Antidots

The effect of microwave radiation on low-temperature electron magnetotransport in a square antidot lattice with a period of d = 0.8 micrometer based on a GaAs quantum well with two occupied energy subbands E1 and E2 is investigated. It is shown that, owing to a significant difference between the electron densities in the subbands, commensurability oscillations of the resistance in the investigated antidot lattice are observed only for the first subband. It is found that microwave irradiation under the cyclotron resonance condition results in the formation of resistance oscillations periodic in the inverse magnetic field in the region of the main commensurability peak. It is established that the period of these oscillations corresponds to the period of magneto-intersubband oscillations. The observed effect is explained by the increase in the rate of intersubband scattering caused by the difference between the electron heating in the subbands E1 and E2.

cond-mat.mes-hall↗

arXiv2019

Anomalous Decay of Quantum Resistance Oscillations of Two Dimensional Helical Electrons in Magnetic Field

Shubnikov de Haas resistance oscillations of highly mobile two dimensional helical electrons propagating on a conducting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by angle $θ$ from the normal to the conducting layer. Strong decrease of oscillation amplitude A is observed with the tilt: $A \sim \exp(-ξ/cos(θ))$, where $ξ$ is a constant. Evolution of the oscillations with temperature T shows that the parameter $ξ$ contains two terms: $ξ=ξ_1+ξ_2 T$. The temperature independent term, $ξ_1$, describes reduction of electron mean free path in magnetic field B pointing toward suppression of the topological protection of the electron states against impurity scattering. The temperature dependent term, $ξ_2 T$, indicates increase of the reciprocal velocity of 2D helical electrons suggesting modification of the electron spectrum in magnetic fields.

cond-mat.mes-hall↗

arXiv2014

3D-mesostructures obtained by self-organization of metallic nanowires

The architecture of novel metallic mesostructures obtained via self-organization of growing nanowires has been investigated. Seashell, fungus and lotus leafshaped structures are reproducibly formed by programmable pulse current electrodeposition on porous membranes. The samples several millimeters in size are obtained. SEM investigation has revealed that the frame of the metallic seashell presents a hierarchical system with elements of fractal selfsimilarity at the nano- and microlevels. The frame is a volumetric multilayer net with conical bundles of nanowires as building blocks. The Pd-Ni nanowires have V-like branches and periodic bulges . TEM study showed that the nanowires consist of nanocrystallites dispersed in an amorphous matrix. Their sizes range from 4 to 15 nm. Local inhomogeneity of PdNi solid solution was observed. In perspective, the proposed technique can be used as a 3D printer for the purposeful synthesis of novel materials with complex quantum nano-architecture.

cond-mat.mtrl-sci↗

arXiv2011

Quantum lifetime of 2D electron in magnetic field

The lifetime of two dimensional electrons in GaAs quantum wells, placed in weak quantizing magnetic fields, is measured using a simple transport method in broad range of temperatures from 0.3 K to 20 K. The temperature variations of the electron lifetime are found to be in good agreement with conventional theory of electron-electron scattering in 2D systems.

cond-mat.mes-hall↗

arXiv2009

Interference of magnetointersubband and phonon-induced resistance oscillations in single GaAs quantum wells with two populated subbands

Low-temperature electron magnetotransport in single GaAs quantum wells with two populated subbands is studied at large filling factors. Magneto-inter-subband (MIS) and acoustic-phonon induced oscillations of the dissipative resistance are found to be coexisting but interfering substantially with each other. The experiments show that amplitude of the MIS-oscillations enhances significantly by phonons, indicating "constructive interference" between the phonon scattering and the intersubband electron transitions. Temperature damping of the quantum oscillations is found to be related to broadening of Landau levels caused by considerable electron-electron scattering.

cond-mat.mes-hall↗

arXiv2009

Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells

The low-temperature($4.2<T<12.5$ K) magnetotransport ($B<2$ T) of two-dimensional electrons occupying two subbands (with energy $E_1$ and $E_2$) is investigated in GaAs single quantum well with AlAs/GaAs superlattice barriers. Two series of Shubnikov-de Haas oscillations are found to be accompanied by magnetointersubband (MIS) oscillations, periodic in the inverse magnetic field. The period of the MIS oscillations obeys condition $Δ_{12}=(E_2-E_1)=k \cdot \hbar ω_c$, where $Δ_{12}$ is the subband energy separation, $ω_c$ is the cyclotron frequency, and $k$ is the positive integer. At $T$=4.2 K the oscillations manifest themselves up to $k$=100. Strong temperature suppression of the magnetointersubband oscillations is observed. We show that the suppression is a result of electron-electron scattering. Our results are in good agreement with recent experiments, indicating that the sensitivity to electron-electron interaction is the fundamental property of magnetoresistance oscillations, originating from the second-order Dingle factor.

cond-mat.mes-hall↗

arXiv2008

Effect of parallel magnetic field on the Zero Differential Resistance State

The non-linear zero-differential resistance state (ZDRS) that occurs for highly mobile two-dimensional electron systems in response to a dc bias in the presence of a strong magnetic field applied perpendicular to the electron plane is suppressed and disappears gradually as the magnetic field is tilted away from the perpendicular at fixed filling factor $ν$. Good agreement is found with a model that considers the effect of the Zeeman splitting of Landau levels enhanced by the in-plane component of the magnetic field.

cond-mat.other↗

arXiv2008

Warming in systems with discrete spectrum: spectral diffusion of two dimensional electrons in magnetic field

Warming in complex physical systems, in particular global warming, attracts significant contemporary interest. It is essential, therefore, to understand basic physical mechanisms leading to overheating. It is well known that application of an electric field to conductors heats electric charge carriers. Often an elevated electron temperature describes the result of the heating. This paper demonstrates that an electric field applied to a conductor with discrete electron spectrum produces a non-equilibrium electron distribution, which cannot be described by temperature. Such electron distribution changes dramatically the conductivity of highly mobile two dimensional electrons in a magnetic field, forcing them into a state with a zero differential resistance. Most importantly the results demonstrate that, in general, the effective overheating in the systems with discrete spectrum is significantly stronger than the one in systems with continuous and homogeneous distribution of the energy levels at the same input power.

cond-mat.mes-hall↗

arXiv2007

Two-Parameter Scaling of Microwave Rectification vs Microwave Power at the Boundary between Two-Dimensional Electron Systems

We report measurements of the rectification of microwave radiation (0.7-20 GHz) at the boundary between two-dimensional electron systems separated by a narrow gap on a silicon surface for different temperatures, electron densities and microwave power. For frequencies above 4 GHz and different temperatures, the rectified voltage V_{dc} as a function of microwave power P can be scaled onto a single universal curve V*_{dc}=f*(P*). The scaled voltage is a linear function of power, V*_{dc} ~ P* for small power and proportional to P*^{1/2} at higher power. A theory is proposed that attributes the rectification to the thermoelectric response due to strong local overheating by the microwave radiation at the boundary between two dissimilar 2D metals. Excellent agreement is obtained between theory and experiment.

cond-mat.str-el↗

arXiv2004

Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field

A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a magnetic field. We show explicitly and quantitatively that a magnetic field applied parallel to the plane of the electrons reduces the slope of the conductivity versus temperature curves to near zero over a broad range of electron densities extending from $n_c$ to deep in the metallic regime where the high field conductivity is on the order of $10 e^2/h$. The strong suppression (or "quenching") of the metallic behavior by a magnetic field sets an important constraint on theory.

cond-mat.str-el↗

arXiv2003

Magnetoconductivity of Insulating Silicon Inversion Layers

The normalized in-plane magnetoconductivity of the dilute strongly interacting system of electrons in silicon MOSFET's scales with $B/T$ for low densities in the insulating phase. Pronounced deviations occur at higher metallic-like densities, where a new energy scale $k_B Δ$ emerges which is not associated with either magnetic field or thermal effects. $B/T$ scaling of the magnetoconductivity breaks down at the density $n_0$ where the energy scale $k_B Δ$ vanishes, near or at the critical density $n_c$ for the apparent metal-insulator transition. The different behavior of the magnetoconductivity at low and high densities suggests the existence of two distinct phases.

cond-mat.str-el↗

arXiv2002

Does $m^g^$ diverge at a finite electron density in silicon inversion layers?

For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density $n_0$. Analysis of these magnetotransport experiments yields a product $g^*m^*$ that diverges at this density (here $g^*$ is the interaction-enhanced Landé $g$-factor and $m^*$ is the effective mass). This claim has been disputed based on direct determinations of the $g^*m^*$ obtained from Shubnikov-de Haas measurements. We briefly review these experiments, and possible sources of the discrepancies.

cond-mat.str-el↗

arXiv2002

In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment

For densities above $n=1.6 \times 10^{11}$ cm$^{-2}$ in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny and Aleiner is obtained for the response of the conductivity to a magnetic field applied parallel to the plane of the electrons. However, the Fermi liquid parameter $F_0^σ(n)$ and the valley splitting $Δ_V(n)$ obtained from fits to the magnetoconductivity, although providing qualitatively correct behavior (including sign), do not yield quantitative agreement with the temperature dependence of the conductivity in zero magnetic field. Our results suggest the existence of additional scattering processes not included in the theory in its present form.

cond-mat.str-el↗

arXiv2002

Spin polarization of strongly interacting 2D electrons: the role of disorder

In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*μ_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct measurement of Shubnikov-de Haas oscillations. The enhanced susceptibility $χ^* \propto (g^*m^*)$ exhibits critical behavior of the form $χ^* \propto (n - n_0)^{-α}$. We examine the significance of the field scale $H_s$ derived from transport measurements, and show that this field signals the onset of full spin polarization only in the absence of disorder. Our results suggest that disorder becomes increasingly important as the electron density is reduced toward the transition.

cond-mat.str-el↗

arXiv2001

Microwave Rectification at the Boundary between Two-Dimensional Electron Systems

Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage $V_{dc}$ is generated whenever the electron densities $n_{1,2}$ of the two metals are different, changing polarity at $n_1 \approx n_2$. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.

cond-mat.mes-hall↗

arXiv2001

Scaling of the magnetoconductivity of silicon MOSFET's: evidence for a quantum phase transition in two dimensions

For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter $H_σ(n,T)$, where $H_σ$ obeys the empirical relation $H_σ=A (n) [Δ(n)^2 +T^2]^{1/2}$. The characteristic energy $k_B Δ$ associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density $n_0$, signaling the approach to a zero-temperature quantum phase transition. We show that $H_σ=AT$ for densities near $n_0$.

cond-mat.str-el↗

arXiv2001

Spin Polarization of Two-Dimensional Electrons Determined from Shubnikov-de Haas Oscillations as a Function of Angle

Recent experiments in the two dimensional electron systems in silicon MOSFETs have shown that the in-plane magnetic field $H_{sat}$ required to saturate the conductivity to its high-field value and the magnetic field $H_s$ needed to completely align the spins of the electrons are comparable. By small-angle Shubnikov-de Haas oscillation measurements that allow separate determinations of the spin-up and spin-down subband populations, we show that $H_{sat}=H_s$ to an accuracy of 5% for electron densities $n_s > 3 \times 10^{11}$ cm$^{-2}$.

cond-mat.str-el↗