Effect of microstructures on the electron-phonon interaction in the disordered metals Pd$_{60}$Ag$_{40}$

Y. L. Zhong; J. J. Lin; L. Y. Kao

doi:10.1103/physrevb.66.132202

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Effect of microstructures on the electron-phonon interaction in the disordered metals Pd$_{60}$Ag$_{40}$

Y. L. Zhong·J. J. Lin·L. Y. Kao

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Abstract

Using the weak-localization method, we have measured the electron-phonon scattering times $τ_{ep}$ in Pd$_{60}$Ag$_{40}$ thick films prepared by DC- and RF-sputtering deposition techniques. In both series of samples, we find an anomalous $1/τ_{ep} \propto T^2\ell$ temperature and disorder dependence, where $\ell$ is the electron elastic mean free path. This anomalous behavior cannot be explained in terms of the current concepts for the electron-phonon interaction in impure conductors. Our result also reveals that the strength of the electron-phonon coupling is much stronger in the DC than RF sputtered films, suggesting that the electron-phonon interaction not only is sensitive to the total level of disorder but also is sensitive to the microscopic quality of the disorder.

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Y. L. Zhong, J. J. Lin, L. Y. Kao. 2002-09-11. Effect of microstructures on the electron-phonon interaction in the disordered metals Pd$_{60}$Ag$_{40}$. https://doi.org/10.1103/physrevb.66.132202

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