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Temperature dependence of electrical resistivity of high-Tc cuprates - from pseudogap to overdoped regions

S. H. Naqib·J. R. Cooper·J. L. Tallon·C. Panagopoulos
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Abstract

The effects of planar hole concentration, p, and in-plane disorder, Zn (y), on the DC resistivity, r(T), of sintered samples of Y_{1-x}Ca_xBa_2(Cu_{1-y}Zn_y)_3O_{7-d} were investigated over a wide doping range by changing both the oxygen deficiency (d) and Ca content (x). From the r(T,p) data we extracted characteristic crossover temperatures on the underdoped and overdoped sides, T* and T_m respectively, above which r(T) is linear. We compare our results with a number of other polycrystalline, thin film and single crystal cuprate superconductors and find similar behavior in the p-dependence of T*(p), T_m(p), and the resistivity exponent, m(p), in fits to r(T) = r_0 + aT^m on the overdoped side. Our findings point towards the possible existence of a quantum critical point (QCP) at the doping p=0.19 +/- 0.01.

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S. H. Naqib, J. R. Cooper, J. L. Tallon, C. Panagopoulos. 2002-09-19. Temperature dependence of electrical resistivity of high-Tc cuprates - from pseudogap to overdoped regions. https://doi.org/10.1016/s0921-4534(02)02330-4

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