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Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide

S. V. Vyshenski·U. Zeitler·R. J. Haug
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Abstract

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)N, where N=0,1,2,3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.

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S. V. Vyshenski, U. Zeitler, R. J. Haug. 2002-10-28. Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide. https://doi.org/10.1134/1.1538291

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