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Coercive Field and Magnetization Deficit in Ga(1-x)Mn(x)As Epilayers

S. J. Potashnik·K. C. Ku·S. H. Chun·R. F. Wang·M. B. Stone·N. Samarth·P. Schiffer
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Abstract

We have studied the field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga(1-x)Mn(x)As for 0.0135 < x < 0.083. Measurements of the low temperature magnetization in fields up to 3 T show a significant deficit in the total moment below that expected for full saturation of all the Mn spins. These results suggest that the spin state of the non-ferromagnetic Mn spins is energetically well separated from the ferromagnetism of the bulk of the spins. We have also studied the coercive field (Hc) as a function of temperature and Mn concentration, finding that Hc decreases with increasing Mn concentration as predicted theoretically.

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S. J. Potashnik, K. C. Ku, S. H. Chun, R. F. Wang, M. B. Stone, N. Samarth, P. Schiffer. 2002-12-11. Coercive Field and Magnetization Deficit in Ga(1-x)Mn(x)As Epilayers. https://doi.org/10.1063/1.1556109

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