arXiv subjects

S. H. Chun

Publications and source records attributed to S. H. Chun.

At least 19 recordsLinked to original sources

arXiv2017

Contrasting magnetoelectric behavior in multiferroic hexaferrites as understood by crystal symmetry analyses

Magnetoelectric (ME) properties under rotating magnetic field H are comparatively investigated in two representative hexaferrites Y-type Ba0.5Sr1.5Zn2(Fe0.92Al0.08)12O22 and Z-type Ba0.52Sr2.48Co2Fe24O41, both of which have exhibited a similar transverse conical spin structure and giant ME coupling near room temperature. When the external H is rotated clockwise by 2pi, in-plane P vector is rotated clockwise by 2pi in the Y-type hexaferrite and counterclockwise by 4pi in the Z-type hexaferrite. A symmetry-based analysis reveals that the faster and opposite rotation of P vector in the Z-type hexaferrite is associated with the existence of a mirror plane perpendicular to c-axis. Moreover, such a peculiar crystal symmetry also results in contrasting microscopic origins for the spin-driven ferroelectricity; only the inverse DM interaction is responsible for the Y-type hexaferrite while additional p-d hybridization becomes more important in the Z-type hexaferrite. This work demonstrates the importance of the crystal symmetry in the determination of ME properties in the hexaferrites and provides a fundamental framework for understanding and applying the giant ME coupling in various ferrites with hexagonal crystal structure.

cond-mat.mtrl-sci↗

arXiv2012

Correction to "minimal unit vector fields"

The paper "Minimal unit vector fields" by O. Gil-Medrano and E. Llinares-Fuster \cite{GilLli1}. is a seminal paper in the field that has been cited by many authors. It contains, however, a minor technical mistake in Theorem 14 that is important to fix. In this short note, we will provide a correction to that result.

math.DG↗

arXiv2009

Anomalous Corrections to Hall Resistivity of Spin-Polarized Two-Dimensional Holes in a GaAs/AlGaAs Heterostructure

Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The anomalous negative corrections increase with the perpendicular magnetization of the two-dimensional hole system. We attribute this to the anomalous Hall effect of spin-polarized carriers in a nonmagnetic system. The anomalous corrections to the conductivity exhibit non-monotonic dependence on the magnetic field.

cond-mat.mes-hall↗

arXiv2007

Remarks on $η$-Einstein unit tangent bundles

We study the geometric properties of the base manifold for the unit tangent bundle satisfying the $η$-Einstein condition with the standard contact metric structure. One of the main theorems is that the unit tangent bundle of 4-dimensional Einstein manifold, equipped with the canonical contact metric structure, is $η$-Einstein manifold if and only if base manifold is the space of constant sectional curvature 1 or 2.

math.DG↗

arXiv2006

Interplay between carrier and impurity concentrations in annealed Ga$_{1-x}$Mn$_{x}$As intrinsic anomalous Hall Effect

Investigating the scaling behavior of annealed Ga$_{1-x}$Mn$_{x}$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect intrinsic and extrinsic origins, respectively. Furthermore, measured anomalous Hall conductivities when properly scaled by carrier concentration remain constant, equal to theoretically predicated values, spanning nearly a decade in conductivity as well as over 100 K in T$_{C}$. Both the qualitative and quantitative agreement confirms the validity of new equations of motion including the Berry phase contributions as well as tunablility of the intrinsic anomalous Hall Effect.

cond-mat.mtrl-sci↗

arXiv2006

Evidence of metallic clustering in annealed Ga1-xMnxAs from atypical scaling behavior of the anomalous Hall coefficient

We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing temperature, we find n ~ 2 to be consistent with recent theories on the intrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealing temperatures far above the optimum, we note n > 3, similar behavior to certain inhomogeneous systems. This observation of atypical behavior agrees well with characteristic features attributable to spherical resonance from metallic inclusions from optical spectroscopy measurements.

cond-mat.mtrl-sci↗

arXiv2003

Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films

We use point contact Andreev reflection spin spectroscopy to measure the transport spin polarization of MnAs epitaxial films grown on (001) GaAs. By analyzing both the temperature dependence of the contact resistance and the phonon spectra of lead acquired simultaneously with the spin polarization measurements, we demonstrate that all the point contacts are in the ballistic limit. A ballistic transport spin polarization of approximately 49% and 44% is obtained for the type A and type B orientations of MnAs, respectively. These measurements are consistent with our density functional calculations, and with recent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)As tunnel junctions.

cond-mat.str-el↗

arXiv2003

Griffiths singularities and magnetoresistive manganites

The large, so-called colossal, magnetoresistivity of doped manganese oxides based on LaMnO3 has attracted considerable attention, but only one unusual feature of the ferromagnetic transition in these compounds. We examine in this paper the progression of magnetic and thermodynamic behavior as the transition temperature is made to vary from 360 K to 218 K by changing the divalent dopant. Single crystals of La_{0.7}Sr_{0.3}MnO3, as is well known, show modest magnetoresistivity and conventional critical behavior. La$_{0.7}$Pb$_{0.3}$ Mn$O_3$, and to an even greater extent, La$_{0.7}$Ca$_{0.3}$MnO$_3$, have unusual magnetic properties extending more than 100 K above the transition. We treat the properties of the latter samples in the context of a Griffiths phase in which the transition temperature is depressed from its maximum value T_{G} by random bond-angle bending.

cond-mat.str-el↗

arXiv2002

Coercive Field and Magnetization Deficit in Ga(1-x)Mn(x)As Epilayers

We have studied the field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga(1-x)Mn(x)As for 0.0135 < x < 0.083. Measurements of the low temperature magnetization in fields up to 3 T show a significant deficit in the total moment below that expected for full saturation of all the Mn spins. These results suggest that the spin state of the non-ferromagnetic Mn spins is energetically well separated from the ferromagnetism of the bulk of the spins. We have also studied the coercive field (Hc) as a function of temperature and Mn concentration, finding that Hc decreases with increasing Mn concentration as predicted theoretically.

cond-mat↗

arXiv2002

Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers

We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show that the higher ferromagnetic transition temperature results from an enhanced free hole density. The data also indicate that, in addition to the carrier concentration, the sample thickness limits the maximum attainable Curie temperature in this material - suggesting that the free surface of Ga1-xMnxAs epilayers is important in determining their physical properties.

cond-mat.mtrl-sci↗

arXiv2002

Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias anomaly and a V^1/2 dependence of the conductance, indicating a correlation gap in the density of states of GaMnAs. These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs.

cond-mat.mtrl-sci↗

arXiv2002

Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As

The measurement of the hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As is notoriously difficult using standard transport techniques due to the dominance of the anomalous Hall effect. Here, we report the first spectroscopic measurement of the hole density in four Ga$_{1-x}$Mn$_{x}$As samples ($x=0, 0.038, 0.061, 0.083$) at room temperature using Raman scattering intensity analysis of the coupled plasmon-LO-phonon mode and the unscreened LO phonon. The unscreened LO phonon frequency linearly decreases as the Mn concentration increases up to 8.3%. The hole density determined from the Raman scattering shows a monotonic increase with increasing $x$ for $x\leq0.083$, exhibiting a direct correlation to the observed $T_c$. The optical technique reported here provides an unambiguous means of determining the hole density in this important new class of ``spintronic'' semiconductor materials.

cond-mat.mtrl-sci↗

arXiv2002

Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers

We examine the Mn concentration dependence of the electronic and magnetic properties of optimally annealed Ga1-xMnxAs epilayers for 1.35% < x < 8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn concentration up to x ~ 0.05, but are almost constant for larger x, with Tc ~ 110 K. The ferromagnetic moment per Mn ion decreases monotonically with increasing x, implying that an increasing fraction of the Mn spins do not participate in the ferromagnetism. By contrast, the derived domain wall thickness, an important parameter for device design, remains surprisingly constant.

cond-mat↗

arXiv2002

Colossal Magnetoresistance is a Griffiths Singularity

It is now widely accepted that the magnetic transition in doped manganites that show large magnetoresistance is a type of percolation effect. This paper demonstrates that the transition should be viewed in the context of the Griffiths phase that arises when disorder suppresses a magnetic transition. This approach explains unusual aspects of susceptibility and heat capacity data from a single crystal of La$_{0.7}$Ca$_{0.3}$MnO$_{3}.$

cond-mat.str-el↗

arXiv2001

Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs

We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250 C for less than 2 hours significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga1-xMnxAs to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material.

cond-mat.mtrl-sci↗

arXiv2001

Two-Carrier Transport in Epitaxially Grown MnAs

Magneto-transport measurements of ferromagnetic MnAs epilayers grown by molecular beam epitaxy reveal the presence of both positive and negative charge carriers. Electrical transport at high temperatures is dominated by holes, and at low temperatures by electrons. We also observe distinct changes in the magnetoresistance associated with the transition between the electron- and hole-dominated transport regimes. These results are of direct relevance to MnAs/semiconductor hybrid heterostructures and their exploitation in electronic and optical spin injection experiments.

cond-mat.mtrl-sci↗

arXiv2000

Charge Transport in Manganites: Hopping Conduction, the Anomalous Hall Effect and Universal Scaling

The low-temperature Hall resistivity ρ_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects, respectively. However, no such decomposition is possible near the Curie temperature which, in these systems, is close to metal-to-insulator transition. Rather, for all of these compounds and to a good approximation, the ρ_{xy} data at various temperatures and magnetic fields collapse (up to an overall scale), on to a single function of the reduced magnetization m=M/M_{sat}, the extremum of this function lying at m~0.4. A new mechanism for the Anomalous Hall Effect in the inelastic hopping regime, which reproduces these scaling curves, is identified. This mechanism, which is an extension of Holstein's model for the Ordinary Hall effect in the hopping regime, arises from the combined effects of the double-exchange-induced quantal phase in triads of Mn ions and spin-orbit interactions. We identify processes that lead to the Anomalous Hall Effect for localized carriers and, along the way, analyze issues of quantum interference in the presence of phonon-assisted hopping. Our results suggest that, near the ferromagnet-to-paramagnet transition, it is appropriate to describe transport in manganites in terms of carrier hopping between states that are localized due to combined effect of magnetic and non-magnetic disorder. We attribute the qualitative variations in resistivity characteristics across manganite compounds to the differing strengths of their carrier self-trapping, and conclude that both disorder-induced localization and self-trapping effects are important for transport.

cond-mat.str-el↗

arXiv2000

Reentrant spin glass behavior in a layered manganite La1.2Sr1.8Mn2O7 single crystals

We report here a detailed study of AC/DC magnetization and longitudinal/transverse transport properties of La$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystals below $T_{c}$ = 121 K. We find that the resistivity upturn below 40 K is related to the reentrant spin glass phase at the same temperature, accompanied by additional anomalous Hall effects. The carrier concentration from the ordinary Hall effects remains constant during the transition and is close to the nominal doping level (0.4 holes/Mn). The spin glass behavior comes from the competition between ferromagnetic double exchange and antiferromagnetic superexchange interactions, which leads to phase separation, i.e. a mixture of ferromagnetic and antiferromagnetic clusters, representing the canted antiferromagnetic state.

cond-mat.str-el↗