Monopolar Optical Orientation of Electronic Spins in Semiconductors

S. A. Tarasenko; E. L. Ivchenko; V. V. Bel'kov; S. D. Ganichev; D. Schowalter; Petra Schneider; M. Sollinger; W. Prettl; V. M. Ustinov; A. E. Zhukov; L. E. Vorobjev

arXiv · cond-mat/0301393

Monopolar Optical Orientation of Electronic Spins in Semiconductors

S. A. Tarasenko·E. L. Ivchenko·V. V. Bel'kov·S. D. Ganichev·D. Schowalter·Petra Schneider·M. Sollinger·W. Prettl·V. M. Ustinov·A. E. Zhukov·L. E. Vorobjev

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Abstract

It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in a monopolar spin orientation of free electrons. Spin polarization in zinc-blende-structure based QWs is demonstrated by the observation of the spin-galvanic and the circular photogalvanic effects. The monopolar spin orientation in n-type materials is shown to be possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account.

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S. A. Tarasenko, E. L. Ivchenko, V. V. Bel'kov, S. D. Ganichev, D. Schowalter, Petra Schneider, M. Sollinger, W. Prettl, V. M. Ustinov, A. E. Zhukov, L. E. Vorobjev. 2003-01-21. Monopolar Optical Orientation of Electronic Spins in Semiconductors. https://arxiv.org/abs/cond-mat/0301393

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