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Epitaxial Growth of the Diluted Magnetic Semiconductors CryGe1-y and CryMnxGe1-x-y

G. Kioseoglou·A. T. Hanbicki·C. H. Li·S. C. Erwin·R. Goswami·B. T. Jonker
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Abstract

We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p-type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations employed (y < 0.04), consistent with density functional theory predictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1-x host systematically reduces the Curie temperature and total magnetization.

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G. Kioseoglou, A. T. Hanbicki, C. H. Li, S. C. Erwin, R. Goswami, B. T. Jonker. 2003-02-12. Epitaxial Growth of the Diluted Magnetic Semiconductors CryGe1-y and CryMnxGe1-x-y. https://doi.org/10.1063/1.1668322

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