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Interface-Induced Electron Spin Splitting in SiGe Heterostructures

L. E. Golub·E. L. Ivchenko
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Abstract

Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001) heterointerface between two diamond-lattice materials. Consequences of the spin splitting on the electron spin relaxation time is discussed.

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L. E. Golub, E. L. Ivchenko. 2003-02-14. Interface-Induced Electron Spin Splitting in SiGe Heterostructures. https://arxiv.org/abs/cond-mat/0302308

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