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Single-electron tunneling in InP nanowires

S. De Franceschi·J. A. van Dam·E. P. A. M. Bakkers·L. F. Feiner·L. Gurevich·L. P. Kouwenhoven
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Abstract

We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor-liquid-solid process. Our InP wires are n-type doped with diameters in the 40-55 nm range and lengths of several microns. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ~10 kOhm, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 micron. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ~1 meV. We also demonstrate energy quantization resulting from the confinement in the wire.

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S. De Franceschi, J. A. van Dam, E. P. A. M. Bakkers, L. F. Feiner, L. Gurevich, L. P. Kouwenhoven. 2003-02-25. Single-electron tunneling in InP nanowires. https://doi.org/10.1063/1.1590426

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