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In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor

T. Wojtowicz·G. Cywinski·W. L. Lim·X. Liu·M. Dobrowolska·J. K. Furdyna·K. M. Yu·W. Walukiewicz·G. B. Kim·M. Cheon·X. Chen·S. M. Wang·H. Luo
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Abstract

A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well with the existing models of carrier-induced ferromagnetism.

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T. Wojtowicz, G. Cywinski, W. L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, G. B. Kim, M. Cheon, X. Chen, S. M. Wang, H. Luo. 2003-03-11. In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor. https://doi.org/10.1063/1.1583142

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