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Numerical Analysis of the Stub Transistor

Alexandre B. Guerra·Edval J. P. Santos
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Abstract

Stubbed waveguides and stub transistors are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized carriers. In this paper, we present the simulation of the conductance of the stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hamiltonian. The oscillatory behavior of the channel conductance with the applied stub voltage is observed.

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Alexandre B. Guerra, Edval J. P. Santos. 2003-04-08. Numerical Analysis of the Stub Transistor. https://arxiv.org/abs/cond-mat/0304201

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