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Edval J. P. Santos

Publications and source records attributed to Edval J. P. Santos.

10 recordsLinked to original sources

Evolution of timekeeping from water clock to quartz clock -- the curious case of the Bulova ACCUTRON 214 the first transistorized wristwatch

The technological discoveries and developments since dawn of civilization that resulted in the modern wristwatch are linked to the evolution of Science itself. A history of over 6000 years filled with amazing technical prowess since the emergence of the first cities in Mesopotamia established by the Šumer civilization. Usage of gears for timekeeping has its origin in the Islamic Golden Age about 1000 years ago. Although gears have been known for over 2000 years such as found in the Antikythera Mechanism. Only in the seventeenth century springs started to be used in clock making. In the eighteenth century the amazing \textit{Tourbillon} was designed and built to increase clock accuracy. In the nineteenth century the tuning fork was used for the first time as timebase. Wristwatches started to become popular in the beginning of the twentieth century. Later in the second half of the twentieth century the first electronic wristwatch was designed and produced, which brings us to the curious case of the Bulova \textit{ACCUTRON} caliber 214 the first transistorized wristwatch, another marvel of technological innovation and craftsmanship whose operation is frequently misunderstood. In this paper the historical evolution of timekeeping is presented. The goal is to show the early connection between Science and Engineering in the development of timekeeping devices. This linked development only became common along the twentieth century and beyond.

physics.hist-ph↗

Bucket-brigade inspired power line network protocol for sensed quantity profile acquisition with smart sensors deployed as a queue in harsh environment

Pressure and temperature profile are key data for safe production in oil and gas wells. In this paper, a bucket-brigade inspired sensor network protocol is proposed which can be used to extract sensed data profile from the nanoscale up to kilometer long structures. The PHY/MAC layers are discussed. This protocol is best suited for low data rate exchanges in small fixed-size packets, named buckets, transmitted as time-domain bursts among high-precision smart sensors deployed as a queue. There is only one coordinator, which is not directly accessible by most of the sensor nodes. The coordinator is responsible for collecting the measurement profile and send it to a supervisory node. There is no need for complex routing mechanism, as the network topology is determined during deployment. There are many applications which require sensors to be deployed as a long queue and sensed data could be transmitted at low data rates. Examples of such monitoring applications are: neural connected artificial skin, oil/gas/water pipeline integrity, power transmission line tower integrity, (rail)road/highway lighting and integrity, individualized monitoring in vineyard or re-foresting or plantation, underwater telecommunications cable integrity, oil/gas riser integrity, oil/gas well temperature and pressure profile, among others. For robustness and reduced electromagnetic interference, wired network is preferred. Besides in some harsh environment wireless is not feasible. To reduce wiring, communications can be carried out in the same cable used to supply electrical power.

cs.NI↗

Measurement of $p\!-\!n$-junction diode behavior under large signal and high frequency

Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to $10 \times τ_{p,n}^{-1}$, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in $p\!-\!n$-junctions. This experimental confirmation is of practical interest, as one can use the theory to extract device parameters, such as: relaxation time $τ_{p,n}$, and junction injection coefficient. These experiments were carried to test the extension of the conventional $p\!-\!n$-junction theory.

physics.app-ph↗

Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes

An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial symmetry, this approach gives rise to useful analytic expressions for the static current--voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of the signal amplitude and the cross section non-uniformity.

physics.app-ph↗

Systematic Oil Flow Modeling in the Quasi-3D Approximation Yields Additional Terms that Allows for Variable Cross-Section Area Tubing

A systematic model development for oil flow in quasi-3D (1D + 2D) is presented. Our approach provides a unified modeling scheme. Besides, additional terms are obtained, which allows for tubing area variation along the flow direction. The area variation can be modeled as analytic function or random fluctuation, as it could be the result of deposits or tubing internal surface roughness. The proposed approach can be used to obtain analytic solutions which provide physical insight into the phenomena under scrutiny, including the validation of software tools, sensor development and sensor placement. One starts from conservation laws as given by kinetic theory and applies the transverse averaging technique (TAT) to extract the one-dimensional approximation in formal grounds. To demonstrate its application, the steady-state Ramey's model, the Hasan's transient model and a simple two-phase model are generated from the obtained equations.

physics.geo-ph↗

Unified Approach to the Large-Signal and High-Frequency Theory of $p-n$-Junctions

Spectral approach to the charge carrier transport in $p-n$-junctions has allowed us to revise the theoretical results relating to large signal operation of the junction to make them valid for both the low and high frequencies ranges. The spectral composition of the external circuit current includes both the DC and AC components. The former produces the static current--voltage characteristic with the modified Bessel function of zeroth order, $I_0(βV_\sim)$, while the latter yields the dynamic admittance with the modified Bessel function of first order, $I_1(βV_\sim)$, either of them depend on the signal amplitude. Our experimental results are consistent with the theoretical ones if a fitting parameter allowing for recombination processes in the depletion layer is taken into account.

cond-mat.mtrl-sci↗

Transverse Averaging Technique for Depletion Capacitance of Nonuniform PN-Junctions

This article evolves an analytical theory of nonuniform $PN$-junctions by employing the transverse averaging technique (TAT) to reduce the three-dimensional semiconductor equations to the quasi-one-dimensional (quasi-1D) form involving all physical quantities as averaged over the longitudinally-varying cross section $S(z)$. Solution of the quasi-1D Poisson's equation shows that, besides the usual depletion capacitance $C_p$ and $C_n$ due to the $p$- and $n$-layers, there is an additional capacitance $C_s$ produced by nonuniformity of the cross-section area $S(z)$. The general expressions derived yield the particular formulas obtained previously for the abrupt and linearly-graded junctions with uniform cross-section. The quasi-1D theory of nonuniform structures is demonstrated by applying the general formulas to the $PN$-junctions of exponentially-varying cross section $S(z)=S_0\exp(αz)$ as most universal and applicable to any polynomial approximation $S(z)\simeq S_0(1+αz)^n$.

cond-mat.other↗

High quality c-axis oriented ZnO thin-film obtained at very low pre-heating temperature

Highly oriented ZnO thin-film has been obtained at a very low pre-heating temperature, with the spin-coating sol-gel technique. The dependence of the c-axis orientation on the pre-heating temperature has been studied with experimental design and response surface techniques to optimize the deposition process with respect to c-axis orientation, and surface uniformity. The optimization variables selected for this study are: pre-heating temperature, spin-coating speed and number of coating layers. The films are probed with X-ray diffraction and electron microscopy.

cond-mat.mtrl-sci↗

Numerical Analysis of the Stub Transistor

Stubbed waveguides and stub transistors are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized carriers. In this paper, we present the simulation of the conductance of the stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hamiltonian. The oscillatory behavior of the channel conductance with the applied stub voltage is observed.

cond-mat.mes-hall↗

Novel Results on the Large-Signal Dynamic Admittance of $p-n$-Junctions

Recent theoretical results obtained by Barybin and Santos have suggested that the dynamic admittance of the $p-n$-junction is proportional to the modified Bessel function of the first kind which depend on an amplitude of ac signal. This result extends the conventional theory usually encountered in known papers and textbooks. In this letter, some experimental results are presented to confirm our theoretical prediction. The measurements were performed with a lock-in amplifier, using a low noise operational amplifier. Two types of the $p-n$-diodes were employed to check our theory: 1N914B diode, typically used for high-frequency applications, and 1N4007 diode, typically used in power supplies. Experimental results are consistent with the theoretical ones if a fitting parameter allowing for generation--recombination processes in the depletion layer is taken into account.

cond-mat.mes-hall↗