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Quasi-ballistic transport in HgTe quantum-well nanostructures

V. Daumer·I. Golombek·M. Gbordzoe·E. G. Novik·V. Hock·C. R. Becker·H. Buhmann·L. W. Molenkamp
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Abstract

The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum-wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 $μ$m. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semi-classical electron trajectories show good agreement with the experiment.

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V. Daumer, I. Golombek, M. Gbordzoe, E. G. Novik, V. Hock, C. R. Becker, H. Buhmann, L. W. Molenkamp. 2003-07-01. Quasi-ballistic transport in HgTe quantum-well nanostructures. https://doi.org/10.1063/1.1602170

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